4H/6H-P 6inch SiC wafer Zero MPD vasega Gaosia Vasega Dummy Vasega

Fa'amatalaga Puupuu:

O le 4H / 6H-P type 6-inch SiC wafer o se mea semiconductor e faʻaaogaina i le gaosiga o masini faʻaeletoroni, e lauiloa mo lona faʻaleleia lelei o le vevela, maualuga le malepelepe voltage, ma le tetee atu i le maualuga o le vevela ma le pala. Ole vasega ole gaosiga ma le Zero MPD (Micro Pipe Defect) e fa'amautinoaina lona fa'atuatuaina ma le mautu i mea fa'aeletonika eletise maualuga. E fa'aoga fa'amea fa'akomepiuta mo le gaosiga o masini tetele ma le fa'atonutonu lelei o le lelei, ae fa'aaoga muamua le fa'aogaina o le fa'aogaina o masini mo le fa'aogaina o masini ma su'ega meafaigaluega. O meatotino mataʻina o le SiC e faʻaaogaina lautele i le maualuga-vevela, maualuga-voltage, ma masini eletise eletise, e pei o masini eletise ma masini RF.

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4H/6H-P Type SiC Composite Substrates Laulau fa'asologa masani

6 inisi le lautele Silicon Carbide (SiC) Fa'apalapala Fa'amatalaga

Vasega			Zero MPD GaosigaVasega (Z Vasega)	Gaosiga Fa'ata'atiaVasega (P Vasega)	Fa'ailoga Tulaga (D Vasega)
Diamita			145.5 mm~150.0 mm
mafiafia			350 μm ± 25 μm
Fa'asinomaga ole Wafer			-Offaxis: 2.0°-4.0° agai i le [1120] ± 0.5° mo 4H/6H-P, I luga ole axis:〈111〉± 0.5° mo 3C-N
Micropipe Density			0 cm-2
Tete'e	p-ituaiga 4H/6H-P		≤0.1 Ωꞏcm		≤0.3 Ωꞏcm
	n-ituaiga 3C-N		≤0.8 mΩꞏcm		≤1 m Ωꞏcm
Primary Flat Orientation		4H/6H-P	-{1010} ± 5.0°
		3C-N	-{110} ± 5.0°
Primary Flat Umi			32.5 mm ± 2.0 mm
Lua Mafolafola Umi			18.0 mm ± 2.0 mm
Tulaga Lua mafolafola			Silisi fa'asaga i luga: 90° CW. mai Prime flat ± 5.0°
Tuusaunoaga Tupito			3 mm		6 mm
LTV/TTV/Bow/Warp			≤2.5 μm/≤5 μm/≤15 μm/≤30 μm		≤10 μm/≤15 μm/≤25 μm/≤40 μm
Talatala			Polani Ra≤1 nm
			CMP Ra≤0.2 nm		Ra≤0.5 nm
Ta'eta'e Tu'u I le Malamalama Maualuluga			Leai		Fa'aputu umi ≤ 10 mm, tasi umi≤2 mm
Papatusi Hex I Malamalama Maualuga Maualuga			Vaega fa'aopoopo ≤0.05%		Vaega fa'aopoopo ≤0.1%
Polytype Areas I le Malamalama Maualuga			Leai		Vaega fa'aopoopo≤3%
Vaaiga Carbon Inclusions			Vaega fa'aopoopo ≤0.05%		Vaega fa'aopoopo ≤3%
Su'ega Sili Sili I luga o le Malamalama Maualuga			Leai		Fa'aopoopo umi≤1×wafer diameter
Sisi Chips Maualuluga I Malosiaga Malamalama			Leai se faatagaina ≥0.2mm lautele ma loloto		5 faatagaina, ≤1 mm taitasi
Silicon Surface Contamination I le Malosi Maualuga			Leai
afifiina			Tele-wafer kaseti po'o se atigipusa ta'itoatasi

Fa'amatalaga:

※ Fa'atapula'a fa'aletonu e fa'atatau i luga atoa o le fa'ato'aga se'i vagana ai le pito e fa'ate'aina. # E tatau ona siaki matasi i luga o foliga o

O le 4H/6H-P type 6-inch SiC wafer ma le Zero MPD grade ma le gaosiga poʻo le dummy grade e faʻaaogaina lautele i faʻaoga faʻaeletoroni. O le lelei tele o le fa'avevelaina o le vevela, maualuga le malepelepe voltage, ma le tete'e atu i si'osi'omaga faigata e fa'amalieina mo le eletise eletise, e pei o le maualuga-voltage ki ma inverters. Ole vasega Zero MPD e fa'amautinoaina ni fa'aletonu laiti, e taua tele mo masini fa'atuatuaina maualuga. O lo'o fa'aaogaina fa'ato'aga fa'akomepiuta i le gaosiga tele o masini eletise ma fa'aoga RF, lea e taua tele ai le fa'atinoga ma le sa'o. I le isi itu, e faʻaaogaina le faʻasologa o faʻataʻitaʻiga, suʻega meafaigaluega, ma faʻataʻitaʻiga, e mafai ai ona faʻatautaia le lelei i totonu o siosiomaga gaosiga semiconductor.

O mea lelei ole N-type SiC composite substrates e aofia ai

Amioga vevela maualuga: O le 4H / 6H-P SiC wafer e faʻafefeteina lelei le vevela, faʻapitoa mo le maualuga o le vevela ma le maualuga o le eletise eletise.
Malosi maualuga malepe: O lona gafatia e faʻatautaia le maualuga o voltage e aunoa ma le toilalo e faʻaogaina ai le eletise eletise ma le maualuga-voltage sui talosaga.
Zero MPD (Micro Pipe Defect) Vasega: La'ititi la'ititi o fa'aletonu e fa'amautinoa ai le fa'atuatuaina ma le fa'atinoga, e taua tele mo le mana'omia o masini fa'aeletoroni.
Gaosiga-Grade mo Mass Gaosiga: E fetaui lelei mo le gaosiga tele o masini semiconductor maualuga faʻatinoina ma tulaga faʻamaonia lelei.
Fa'ailoga Tulaga mo Su'ega ma Fa'avasegaina: Fa'aagaaga le fa'avasegaina o fa'agasologa, su'ega o mea faigaluega, ma fa'ata'ita'iga e aunoa ma le fa'aogaina o fa'ato'aga fa'atosina maualuga tau.

Aotelega, 4H/6H-P 6-inisi SiC wafers ma Zero MPD grade, vasega gaosiga, ma le dummy togi ofoina atu tulaga lelei mo le atinaeina o masini faaeletonika maualuga-faatinoga. O nei wafers e sili ona aoga i talosaga e manaʻomia ai le maualuga o le vevela, maualuga le malosi, ma le lelei o le liua o le mana. Ole togi ole Zero MPD e fa'amautinoaina ni fa'aletonu laiti mo le fa'atuatuaina ma le mautu o le fa'atinoga o masini, a'o fa'ameamea fa'ameamea e lagolago ai le gaosiga tele ma le fa'atonuga lelei. E maua ai e wafers Dummy-grade se vaifofo taugofie mo le fa'avasegaina o fa'agasologa ma le fa'avasegaina o mea faigaluega, ma avea ai ma mea e mana'omia mo le gaosiga o semiconductor sa'o maualuga.