50.8mm 2inch GaN i luga o le safaira Epi-layer wafer

Fa'amatalaga Puupuu:

I le avea ai ma se vaega lona tolu o mea semiconductor, gallium nitride o loʻo i ai le lelei o le maualuga o le vevela, maualuga le fesoʻotaʻiga, maualuga le vevela ma le lautele o le va. E tusa ai ma mea eseese substrate, gallium nitride epitaxial laupepa e mafai ona vaevaeina i ni vaega se fa: gallium nitride e faʻavae i luga o le gallium nitride, silicon carbide based gallium nitride, safaira faʻavae gallium nitride ma silicon based gallium nitride. Silicon-based gallium nitride epitaxial sheet o le oloa sili ona faʻaaogaina ma le maualalo o tau gaosiga ma tekinolosi gaosiga matutua.


Fa'amatalaga Oloa

Faailoga o oloa

Fa'aogaina o le gallium nitride GaN epitaxial pepa

Faʻavae i luga o le faʻatinoga o le gallium nitride, gallium nitride epitaxial chips e sili ona talafeagai mo le malosi maualuga, maualuga taimi, ma le maualalo o le eletise.

E atagia i:

1) High bandgap: O le bandgap maualuga e faʻaleleia ai le maualuga o le eletise o masini gallium nitride ma e mafai ona maua ai le malosi maualuga atu nai lo masini gallium arsenide, lea e sili ona talafeagai mo nofoaga autu o fesoʻotaʻiga 5G, radar militeri ma isi fanua;

2) Faʻaleleia maualuga le faʻaliliuina: o le on-resistance o le gallium nitride switching power electronic device e 3 poloaiga o le maualuga maualalo ifo nai lo masini silicon, lea e mafai ona faʻaitiitia ai le gau i luga o le suiga;

3) O le maualuga o le vevela: o le maualuga o le vevela o le gallium nitride e maua ai le lelei o le faʻaogaina o le vevela, talafeagai mo le gaosiga o le malosi maualuga, maualuga-vevela ma isi vaega o masini;

4) Faʻaleagaina le malosi o le eletise: E ui lava o le malepelepe o le eletise eletise o le gallium nitride e latalata ile silicon nitride, ona o le semiconductor process, mea lattice mismatch ma isi mea, o le faʻapalepale eletise o masini gallium nitride e masani lava ile 1000V, ma le saogalemu fa'aoga voltage e masani lava i lalo ole 650V.

Aitema

GaN-TCU-C50

GaN-TCN-C50

GaN-TCP-C50

Fua

e 50.8mm ± 0.1mm

mafiafia

4.5±0.5 um

4.5±0.5um

Fa'atonuga

C-vaalele(0001) ±0.5°

Ituaiga Fa'aoso

N-ituaiga (Ua le fa'asaoina)

Ituaiga N (Si-doped)

Ituaiga P (Mg-doped)

Tete'e(3O0K)

<0.5 Q・cm

<0.05 Q・cm

~ 10 Q・cm

Fa'atonuga o le avefe'au

<5x1017cm-3

> 1x1018cm-3

> 6x1016 cm-3

Fe'avea'i

~ 300 cm2/Vs

~ 200 cm2/Vs

~ 10 cm2/Vs

Dislocation Density

E itiiti ifo i le 5x108cm-2(fa'atatau e FWHM a XRD)

Fa'asologa o eleele

GaN i luga o le Safaira(Tulaga: SSP Filifiliga: DSP)

Fa'aaogā Laufanua

> 90%

afifi

Faʻapipiʻiina i totonu o le vasega 100 potu mama siosiomaga, i kaseti o le 25pcs poʻo ni pusa faʻapipiʻi tasi, i lalo o se siosiomaga nitrogen.

* O isi mafiafia e mafai ona faʻapipiʻiina

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