6 inisi GaN-On-Safaira

Fa'amatalaga Puupuu:

150mm 6inch GaN i luga ole Silicon/Sapphire/SiC Epi-layer wafer Gallium nitride epitaxial wafer

O le 6-inisi sapphire substrate wafer o se mea semiconductor sili ona lelei o loʻo iai i luga ole gallium nitride (GaN) o loʻo tupu i luga o se mea faʻapipiʻi safaira. O meafaitino e sili ona lelei fela'uaiga fa'aeletoroni ma e lelei mo le gaosiga o masini semiconductor maualuga ma maualuga.

Auina imeli ia matou

Fa'amatalaga Oloa

Faailoga o oloa

150mm 6inch GaN i luga ole Silicon/Sapphire/SiC Epi-layer wafer Gallium nitride epitaxial wafer

Metotia o le gaosiga: O le fa'agasologa o le gaosiga e aofia ai le fa'atupuina o gaN i luga o le safaira e fa'aogaina ai auala fa'apitoa e pei o le fa'aputuina o ausa kemikolo-organic (MOCVD) po'o le molecular beam epitaxy (MBE). O le faʻagasologa o le faʻapipiʻiina o loʻo faʻatinoina i lalo o tulaga faʻatonutonu e faʻamautinoa ai le maualuga o le tioata ma le ata tifaga.

6inch GaN-On-Sapphire talosaga: 6-inisi safaira substrate meataalo o loʻo faʻaaogaina lautele i fesoʻotaʻiga microwave, faʻaogaina o le radar, tekinolosi uaea ma optoelectronics.

O nisi o talosaga masani e aofia ai

1. Rf malosi fa'atele

2. Alamanuia moli LED

3. Mea faigaluega feso'ota'iga feso'ota'iga uaealesi

4. Masini faaeletonika i le siosiomaga vevela maualuga

5. Optoelectronic masini

Fa'amatalaga o oloa

- Tele: O le lautele o le mea'ai e 6 inisi (tusa ma le 150 mm).

- Tulaga lelei: O le pito i luga ua faʻalelei lelei e maua ai le faʻata sili ona lelei.

- Mafiafia: O le mafiafia o le GaN layer e mafai ona faʻatulagaina e tusa ai ma manaʻoga faʻapitoa.

- Fa'apipi'i: O lo'o fa'apipi'iina ma le fa'aeteete le mea'ai i mea fa'aanti-static e puipuia ai le fa'aleagaina i le taimi o felauaiga.

- Fa'atulagaina pito: O le mea'ai e iai pito fa'atulagaina fa'apitoa e faafaigofie ai le fa'aogaina ma le fa'agaioiga i le taimi o sauniuniga o masini.

- Isi ta'iala: Fa'apitoa fa'apitoa e pei o le manifinifi, resistivity ma le fa'atonuga o le doping e mafai ona fetu'una'i e tusa ai ma mana'oga o tagata fa'atau.

Faatasi ai ma a latou meafaitino sili atu ma faʻaoga eseese, 6-inisi sapphire substrate wafers o se filifiliga faʻalagolago mo le atinaʻeina o masini semiconductor maualuga-faʻatinoga i pisinisi eseese.

Alafua	6” 1mm <111> p-ituaiga Si	6” 1mm <111> p-ituaiga Si
Epi MafiafiaAvg	~5um	~7um
Epi ThickUnif	<2%	<2%
punou	+/-45um	+/-45um
Ta'e	<5mm	<5mm
Tu'usa'o BV	>1000V	>1400V
HEMT Al%	25-35%	25-35%
HEMT MafiafiaAvg	20-30nm	20-30nm
Insitu SiN Cap	5-60nm	5-60nm
2DEG fa'atasi	~10¹³cm^-2	~10¹³cm^-2
Fe'avea'i	~2000cm²/Vs (<2%)	~2000cm²/Vs (<2%)
Rsh	<330ohm/sq (<2%)	<330ohm/sq (<2%)