LT Lithium Tantalate (LiTaO3) Crystal 2inch/3inch/4inch/6寸inch Orientaiton Y-42°/36°/108° Mafiafia 250-500um
Fa'agata fa'atekinisi
Igoa | Optical-grade LiTaO3 | Tulaga laulau leo LiTaO3 |
Axial | Z tipi + / - 0.2 ° | 36 ° Y tipi / 42 ° Y tipi / X tipi(+ / - 0.2 °) |
Diamita | 76.2mm + / - 0.3mm/100±0.2mm | 76.2mm + /-0.3mm100mm + /-0.3mm 0r 150±0.5mm |
Vaalele Datum | 22mm + / - 2mm | 22mm + /-2mm32mm + /-2mm |
mafiafia | 500um + /-5mm1000um + /-5mm | 500um + /-20mm350um + /-20mm |
TTV | ≤ 10um | ≤ 10um |
Curie vevela | 605 °C + / - 0.7 °C (Metotia DTA) | 605 °C + / -3 °C (Metotia DTA |
Tulaga lelei | Fa'aliga lua itu | Fa'aliga lua itu |
Fa'aitu'u pito | taamilomilo pito | taamilomilo pito |
Uiga Autu
1. Fa'atonuga tioata ma Fa'atinoga Fa'aeletise
· Fa'amautu Crystallographic: 100% 4H-SiC polytype pule'aga, zero multicrystalline inclusions (fa'ata'ita'iga, 6H/15R), fa'atasi ai ma le XRD lulu pupuni atoa-lautele i le afa-maualuga (FWHM) ≤32.7 arcsec.
· Maualuluga Avea ma Avega: Eletonika fe'avea'i o le 5,400 cm²/V·s (4H-SiC) ma le pu e 380 cm²/V·s, e mafai ai ona fa'atulagaina masini fa'akomepiuta.
· Malosi o le Radiation: Tatalia le 1 MeV neutron irradiation faʻatasi ai ma le faʻaleagaina o le faʻaleagaina o le 1 × 10¹⁵ n / cm², lelei mo le vaalele ma le faʻaogaina o mea faaniukilia.
2. Thermal ma Mechanical Meatotino
· Tulaga Fa'avevela Fa'avevela: 4.9 W/cm·K (4H-SiC), fa'atoluina le silikoni, lagolago le fa'agaioiga i luga ole 200°C.
· Fa'asao Fa'alautele Fa'amama maualalo: CTE o le 4.0 × 10⁻⁶ / K (25-1000 ° C), fa'amautinoa le fetaui lelei ma le fa'apipi'iina o le silicon ma fa'aitiitia ai le mamafa o le vevela.
3. Pulea Fa'aletonu ma Fa'atonu Fa'atonu
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· O'o'o ole paipa: <0.3 cm⁻² (8-inisi sifi), ma'ema'e ma'ema'e <1,000 cm⁻² (fa'amaonia e ala i le togitogiina o le KOH).
· Tulaga Lelei: CMP-polesi i le Ra <0.2 nm, fa'afeiloa'i EUV lithography-grade mafolafola mana'oga.
Talosaga Autu
Malo | Fa'atinoga Fa'atusa | Tulaga Fa'ainisinia |
Feso'ota'iga Optical | 100G/400G lasers, fa'akomepi photonics hybrid modules | InP fatu substrates e mafai ai le bandgap tuusaʻo (1.34 eV) ma le heteroepitaxy faʻavae Si, faʻaitiitia le gau o fesoʻotaʻiga mata. |
Ta'avale Malosi Fou | 800V feliuliua'i maualuga-volt, luga o uta (OBC) | 4H-SiC substrates e fa'asagatau> 1,200 V, fa'aitiitia le gau o le fa'aosoina i le 50% ma le voluma o le polokalama e 40%. |
5G Feso'ota'iga | Melimita-galu RF masini (PA/LNA), fa'atūlaga fa'aola eletise | Semi-insulating SiC substrates (resistivity> 10⁵ Ω·cm) mafai ai le maualuga-alave (60 GHz +) faʻapipiʻi passive. |
Meafaigaluega Fa'apisinisi | Su'e vevela maualuga, transformers o lo'o i ai nei, mata'itū fa'aaniukilia reactor | InSb fatu fatu (0.17 eV bandgap) e maua ai le maaleale maaleale e oo atu i le 300%@10 T. |
LiTaO₃ Wafers - Uiga Autu
1. Fa'atinoga Piezoelectric Sili
· Piezoelectric coefficients maualuga (d₃₃~8-10 pC/N, K²~0.5%) e mafai ai masini SAW/BAW maualuga-vave ma fa'aofi gau <1.5dB mo 5G RF filiga
· E sili ona lelei feso'ota'iga electromechanical e lagolagoina le lautele-bandwidth (≥5%) fa'amama mamanu mo sub-6GHz ma mmWave talosaga
2. Meatotino Optical
· Fa'alilolilo alalaupapa (> 70% fa'asalalau mai le 400-5000nm) mo fa'aogaina eletise-optic e ausia> 40GHz bandwidth.
· Malosi nonlinear opitika susceptibility (χ⁽²⁾~30pm/V) faafaigofieina lelei lona lua fautasi (SHG) i leisa faiga
3. Mauaina o le Siosiomaga
· O le maualuga o le vevela o le Curie (600°C) e fa'atumauina le tali piezoelectric i totonu o ta'avale-va'aiga (-40°C i le 150°C) si'osi'omaga
· Ole malosi ole vaila'au fa'asaga ile acids/alkalies (pH1-13) fa'amautinoaina le fa'atuatuaina ile fa'aogaina o masini fa'apitoa.
4. Agava'a Fa'apitoa
· Fa'ainisinia fa'asinomaga: tipi X (51°), tipi Y (0°), tipi Z (36°) mo tali piezoelectric fa'afetaui.
· Filifiliga fa'aoga: Mg-doped (tete'e fa'aleagaina), Zn-doped (fa'aleleia d₃₃)
· Fa'ai'uga i luga: Epitaxial-ready polesi (Ra<0.5nm), ITO/Au metallization
LiTaO₃ Wafers - Talosaga Tulaga Muamua
1. RF Luma-I'uga Modules
· 5G NR SAW filiga (Band n77/n79) faʻatasi ai ma le vevela faʻatasi o taimi (TCF) <|-15ppm/°C|
· Resonators BAW tele-lautele mo WiFi 6E/7 (5.925-7.125GHz)
2. Integrated Photonics
· Mach-Zehnder modulators maualuga (> 100Gbps) mo fesoʻotaʻiga mataʻutia.
· QWIP infrared detectors fa'atasi ai ma galu fa'agata e mafai ona fa'aogaina mai le 3-14μm
3. Taavale Fa'aeletonika
· Ultrasonic paka ta'avale fa'atasi ma> 200kHz fa'agaioiga masani
· TPMS piezoelectric transducers ola -40°C i le 125°C uila uila
4. Faiga Puipuiga
· EW fa'amama fa'amama fa'atasi ma >60dB fafo-o-fa'a'ili teena
· Fa'amalama IR su'esu'e fa'aulu fa'asalalauina fa'avevela 3-5μm MWIR
5. Tekonolosi Fa'afou
· Optomechanical quantum transducers mo microwave-i-optical liua
· PMUT fa'asologa mo ata fa'afoma'i fa'afoma'i (>20MHz resolution)
LiTaO₃ Wafers - XKH Services
1. Puleaina o le Sapalai
· Boule-to-wafer faʻaogaina ma le 4-vaiaso taʻitaʻi taimi mo faʻamatalaga masani
· Fa'atauga sili ona lelei e tu'uina atu ai le 10-15% tau fa'atauva'a fa'asaga i tagata tauva
2. Fofo Fa'apitoa
· Wafering fa'apitoa-fa'atonu: 36°±0.5° Y-tipi mo le fa'atinoga lelei o le SAW
· Fa'apipi'i fa'apipi'i: MgO (5mol%) fa'ama'i mo fa'aoga mata
Au'aunaga fa'ameamea: Cr/Au (100/1000Å) mamanu fa'aeletise
3. Lagolago Fa'atekinisi
· Faʻamatalaga o mea: XRD faʻafefe faʻafefe (FWHM<0.01 °), suʻesuʻega o luga ole AFM
· Fa'ata'ita'iga o masini: Fa'ata'ita'iga FEM mo le fa'ata'ita'iina o mamanu fa'amama a le SAW
Fa'ai'uga
LiTaO₃ wafers e fa'aauau pea ona fa'aagaagaina fa'atekonolosi fa'atekonolosi i feso'ota'iga RF, tu'ufa'atasi photonics, ma masini si'osi'omaga saua. O le tomai fa'apitoa a le XKH, sa'o lelei o le gaosiga, ma le fa'ainisinia fa'aoga lagolago e fesoasoani ai i tagata fa'atau e fa'ato'ilaloina lu'itau fa'ata'ita'iga i faiga fa'aeletoroni e sosoo ai.


