LT Lithium Tantalate (LiTaO3) Crystal 2inch/3inch/4inch/6寸inch Orientaiton Y-42°/36°/108° Mafiafia 250-500um​​

Fa'amatalaga Puupuu:

LiTaO₃ wafers e fai ma sui o le piezoelectric ma le ferroelectric meafaitino faiga, faʻaalia tulaga faʻapitoa piezoelectric coefficients, faʻamautu vevela, ma mea faʻapipiʻi, ma avea ai ma mea e manaʻomia mo le faʻafefeteina o le galu (SAW) i luga o le eleele, galu acoustic tele (BAW) resonators, modulators opitika, ma faʻamatalaga infrared. O le XKH e fa'apitoa i le maualuga o le LiTaO₃ wafer R&D ma le gaosiga, fa'aaogaina le Czochralski (CZ) fa'atuputele tioata ma fa'agaioiga vai epitaxy (LPE) e fa'amautinoa ai le tutusa lelei o le tioata ma le fa'aletonu <100/cm².

 

XKH sapalai 3-inisi, 4-inisi, ma 6-inisi LiTaO₃ wafers ma le tele o tioata tioata (X-cut, Y-cut, Z-cut), lagolago doping fa'apitoa (Mg, Zn) ma poling treatments e fa'amalieina mana'oga fa'apitoa. Le mea'ai dielectric faifai pea (ε~40-50), piezoelectric coefficient (d₃₃~8-10 pC/N), ma Curie vevela (~ 600°C) faatuina LiTaO₃ e avea ma substrate e sili ona lelei mo filiga-telefoni ma sensors saʻo.

 

O a matou gaosiga tu'ufa'atasia tu'ufa'atasia e aofia ai le fa'atuputeleina o tioata, fa'asolo, fa'apolopolo, ma le fa'aputuina o ata manifinifi, fa'atasi ai ma le gaosiga fa'alemasina e sili atu i le 3,000 wafers e tautua ai feso'ota'iga 5G, fa'atau mea fa'akomepiuta, photonics, ma fale puipui. Matou te tu'uina atu fa'atalanoaga fa'apitoa fa'apitoa, fa'ata'ita'iga fa'ata'ita'iga, ma 'au'aunaga fa'ata'ita'i fa'ata'ita'i maualalo e tu'uina atu ai fofo LiTaO₃ sili ona lelei.


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    Fa'agata fa'atekinisi

    Igoa Optical-grade LiTaO3 Tulaga laulau leo ​​LiTaO3
    Axial Z tipi + / - 0.2 ° 36 ° Y tipi / 42 ° Y tipi / X tipi(+ / - 0.2 °)
    Diamita 76.2mm + / - 0.3mm/100±0.2mm 76.2mm + /-0.3mm100mm + /-0.3mm 0r 150±0.5mm
    Vaalele Datum 22mm + / - 2mm 22mm + /-2mm32mm + /-2mm
    mafiafia 500um + /-5mm1000um + /-5mm 500um + /-20mm350um + /-20mm
    TTV ≤ 10um ≤ 10um
    Curie vevela 605 °C + / - 0.7 °C (Metotia DTA) 605 °C + / -3 °C (Metotia DTA
    Tulaga lelei Fa'aliga lua itu Fa'aliga lua itu
    Fa'aitu'u pito taamilomilo pito taamilomilo pito

     

    Uiga Autu

    1. Fa'atonuga tioata ma Fa'atinoga Fa'aeletise​

    · Fa'amautu Crystallographic: 100% 4H-SiC polytype pule'aga, zero multicrystalline inclusions (fa'ata'ita'iga, 6H/15R), fa'atasi ai ma le XRD lulu pupuni atoa-lautele i le afa-maualuga (FWHM) ≤32.7 arcsec.
    · Maualuluga Avea ma Avega: Eletonika fe'avea'i o le 5,400 cm²/V·s (4H-SiC) ma le pu e 380 cm²/V·s, e mafai ai ona fa'atulagaina masini fa'akomepiuta.
    · Malosi o le Radiation: Tatalia le 1 MeV neutron irradiation faʻatasi ai ma le faʻaleagaina o le faʻaleagaina o le 1 × 10¹⁵ n / cm², lelei mo le vaalele ma le faʻaogaina o mea faaniukilia.

    2. Thermal ma Mechanical Meatotino

    · Tulaga Fa'avevela Fa'avevela: 4.9 W/cm·K (4H-SiC), fa'atoluina le silikoni, lagolago le fa'agaioiga i luga ole 200°C.
    · Fa'asao Fa'alautele Fa'amama maualalo: CTE o le 4.0 × 10⁻⁶ / K (25-1000 ° C), fa'amautinoa le fetaui lelei ma le fa'apipi'iina o le silicon ma fa'aitiitia ai le mamafa o le vevela.

    3. Pulea Fa'aletonu ma Fa'atonu Fa'atonu
    '
    · O'o'o ole paipa: <0.3 cm⁻² (8-inisi sifi), ma'ema'e ma'ema'e <1,000 cm⁻² (fa'amaonia e ala i le togitogiina o le KOH).
    · Tulaga Lelei: CMP-polesi i le Ra <0.2 nm, fa'afeiloa'i EUV lithography-grade mafolafola mana'oga.

    Talosaga Autu

    Malo

    Fa'atinoga Fa'atusa

    Tulaga Fa'ainisinia

    Feso'ota'iga Optical

    100G/400G lasers, fa'akomepi photonics hybrid modules

    InP fatu substrates e mafai ai le bandgap tuusaʻo (1.34 eV) ma le heteroepitaxy faʻavae Si, faʻaitiitia le gau o fesoʻotaʻiga mata.

    Ta'avale Malosi Fou

    800V feliuliua'i maualuga-volt, luga o uta (OBC)

    4H-SiC substrates e fa'asagatau> 1,200 V, fa'aitiitia le gau o le fa'aosoina i le 50% ma le voluma o le polokalama e 40%.

    5G Feso'ota'iga

    Melimita-galu RF masini (PA/LNA), fa'atūlaga fa'aola eletise

    Semi-insulating SiC substrates (resistivity> 10⁵ Ω·cm) mafai ai le maualuga-alave (60 GHz +) faʻapipiʻi passive.

    Meafaigaluega Fa'apisinisi

    Su'e vevela maualuga, transformers o lo'o i ai nei, mata'itū fa'aaniukilia reactor

    InSb fatu fatu (0.17 eV bandgap) e maua ai le maaleale maaleale e oo atu i le 300%@10 T.

     

    LiTaO₃ Wafers - Uiga Autu

    1. Fa'atinoga Piezoelectric Sili

    · Piezoelectric coefficients maualuga (d₃₃~8-10 pC/N, K²~0.5%) e mafai ai masini SAW/BAW maualuga-vave ma fa'aofi gau <1.5dB mo 5G RF filiga

    · E sili ona lelei feso'ota'iga electromechanical e lagolagoina le lautele-bandwidth (≥5%) fa'amama mamanu mo sub-6GHz ma mmWave talosaga

    2. Meatotino Optical

    · Fa'alilolilo alalaupapa (> 70% fa'asalalau mai le 400-5000nm) mo fa'aogaina eletise-optic e ausia> 40GHz bandwidth.

    · Malosi nonlinear opitika susceptibility (χ⁽²⁾~30pm/V) faafaigofieina lelei lona lua fautasi (SHG) i leisa faiga

    3. Mauaina o le Siosiomaga

    · O le maualuga o le vevela o le Curie (600°C) e fa'atumauina le tali piezoelectric i totonu o ta'avale-va'aiga (-40°C i le 150°C) si'osi'omaga

    · Ole malosi ole vaila'au fa'asaga ile acids/alkalies (pH1-13) fa'amautinoaina le fa'atuatuaina ile fa'aogaina o masini fa'apitoa.

    4. Agava'a Fa'apitoa

    · Fa'ainisinia fa'asinomaga: tipi X (51°), tipi Y (0°), tipi Z (36°) mo tali piezoelectric fa'afetaui.

    · Filifiliga fa'aoga: Mg-doped (tete'e fa'aleagaina), Zn-doped (fa'aleleia d₃₃)

    · Fa'ai'uga i luga: Epitaxial-ready polesi (Ra<0.5nm), ITO/Au metallization

    LiTaO₃ Wafers - Talosaga Tulaga Muamua

    1. RF Luma-I'uga Modules

    · 5G NR SAW filiga (Band n77/n79) faʻatasi ai ma le vevela faʻatasi o taimi (TCF) <|-15ppm/°C|

    · Resonators BAW tele-lautele mo WiFi 6E/7 (5.925-7.125GHz)

    2. Integrated Photonics

    · Mach-Zehnder modulators maualuga (> 100Gbps) mo fesoʻotaʻiga mataʻutia.

    · QWIP infrared detectors fa'atasi ai ma galu fa'agata e mafai ona fa'aogaina mai le 3-14μm

    3. Taavale Fa'aeletonika

    · Ultrasonic paka ta'avale fa'atasi ma> 200kHz fa'agaioiga masani

    · TPMS piezoelectric transducers ola -40°C i le 125°C uila uila

    4. Faiga Puipuiga

    · EW fa'amama fa'amama fa'atasi ma >60dB fafo-o-fa'a'ili teena

    · Fa'amalama IR su'esu'e fa'aulu fa'asalalauina fa'avevela 3-5μm MWIR

    5. Tekonolosi Fa'afou

    · Optomechanical quantum transducers mo microwave-i-optical liua

    · PMUT fa'asologa mo ata fa'afoma'i fa'afoma'i (>20MHz resolution)

    LiTaO₃ Wafers - XKH Services

    1. Puleaina o le Sapalai

    · Boule-to-wafer faʻaogaina ma le 4-vaiaso taʻitaʻi taimi mo faʻamatalaga masani

    · Fa'atauga sili ona lelei e tu'uina atu ai le 10-15% tau fa'atauva'a fa'asaga i tagata tauva

    2. Fofo Fa'apitoa

    · Wafering fa'apitoa-fa'atonu: 36°±0.5° Y-tipi mo le fa'atinoga lelei o le SAW

    · Fa'apipi'i fa'apipi'i: MgO (5mol%) fa'ama'i mo fa'aoga mata

    Au'aunaga fa'ameamea: Cr/Au (100/1000Å) mamanu fa'aeletise

    3. Lagolago Fa'atekinisi

    · Faʻamatalaga o mea: XRD faʻafefe faʻafefe (FWHM<0.01 °), suʻesuʻega o luga ole AFM

    · Fa'ata'ita'iga o masini: Fa'ata'ita'iga FEM mo le fa'ata'ita'iina o mamanu fa'amama a le SAW

    Fa'ai'uga

    LiTaO₃ wafers e fa'aauau pea ona fa'aagaagaina fa'atekonolosi fa'atekonolosi i feso'ota'iga RF, tu'ufa'atasi photonics, ma masini si'osi'omaga saua. O le tomai fa'apitoa a le XKH, sa'o lelei o le gaosiga, ma le fa'ainisinia fa'aoga lagolago e fesoasoani ai i tagata fa'atau e fa'ato'ilaloina lu'itau fa'ata'ita'iga i faiga fa'aeletoroni e sosoo ai.

    Meafaigaluega Fa'afoma'i Fa'afo'i Fa'afoliga Laser Holographic 2
    Meafaigaluega Fa'afoma'i Fa'afo'i Fa'afoliga Laser Holographic 3
    Meafaigaluega Fa'a'ole'ole Fa'afo'i Fa'afoliga Laser Holographic 5

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