p-ituaiga 4H/6H-P 3C-N TYPE SIC mea'ai 4 inisi 〈111〉± 0.5°Zero MPD

p-ituaiga 4H/6H-P 3C-N TYPE SIC mea fa'apipi'i 4 inisi 〈111〉± 0.5°Zero MPD Ata Fa'aalia

Fa'amatalaga Puupuu:

O le P-ituaiga 4H/6H-P 3C-N ituaiga SiC substrate, 4-inisi ma se 〈111〉± 0.5 ° fa'asinomaga ma Zero MPD (Micro Pipe Defect), o se tulaga maualuga-faatinoga semiconductor mea fuafuaina mo masini faaeletonika maualuluga. gaosiga. E lauiloa mo le lelei tele o le vevela, eletise gau, ma le malosi o le tetee atu i le maualuga o le vevela ma le pala, o lenei mea e sili ona lelei mo le eletise eletise ma le RF. O le Zero MPD grade e faʻamautinoa ai ni faaletonu laiti, faʻamautinoa le faʻamaoni ma le mautu i masini maualuga. O lona fa'atonuga sa'o 〈111〉± 0.5° e mafai ai ona fa'aoga sa'o i le taimi o le fa'againa, ma fa'atatau mo faiga fa'aola tetele. O lenei substrate e masani ona faʻaaogaina i le maualuga o le vevela, maualuga-voltage, ma le tele o taimi faʻaeletoroni, e pei o le faʻaliliuina o le eletise, faʻaliliuga, ma vaega RF.

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Fa'amatalaga Oloa

Faailoga o oloa

4H/6H-P Type SiC Composite Substrates La'au ta'oto masani

4 inisi le lautele SiliconCarbide (SiC) Lafu Fa'amatalaga

Vasega			Zero MPD Gaosiga Vasega (Z Vasega)	Gaosiga Fa'ata'atia Vasega (P Vasega)	Fa'ailoga Tulaga (D Vasega)
Diamita			99.5 mm~100.0 mm
mafiafia			350 μm ± 25 μm
Fa'asinomaga ole Wafer			Tu'u ese: 2.0°-4.0° agai i le [112(-)0] ± 0.5° mo le 4H/6H-P, On axis:〈111〉± 0.5° mo 3C-N
Micropipe Density			0 cm-2
Tete'e	p-ituaiga 4H/6H-P		≤0.1 Ωꞏcm		≤0.3 Ωꞏcm
	n-ituaiga 3C-N		≤0.8 mΩꞏcm		≤1 m Ωꞏcm
Primary Flat Orientation		4H/6H-P	- {1010} ± 5.0°
		3C-N	- {110} ± 5.0°
Primary Flat Umi			32.5 mm ± 2.0 mm
Lua Mafolafola Umi			18.0 mm ± 2.0 mm
Tulaga Lua mafolafola			Silisi fa'asaga i luga: 90° CW. mai Prime flat±5.0°
Tuusaunoaga Tupito			3 mm		6 mm
LTV/TTV/Bow/Warp			≤2.5 μm/≤5 μm/≤15 μm/≤30 μm		≤10 μm/≤15 μm/≤25 μm/≤40 μm
Talatala			Polani Ra≤1 nm
			CMP Ra≤0.2 nm		Ra≤0.5 nm
Ta'eta'e Tu'u I le Malamalama Maualuluga			Leai		Fa'aputu umi ≤ 10 mm, tasi umi≤2 mm
Papatusi Hex I Malamalama Maualuga Maualuga			Vaega fa'aopoopo ≤0.05%		Vaega fa'aopoopo ≤0.1%
Polytype Areas I le Malamalama Maualuga			Leai		Vaega fa'aopoopo≤3%
Vaaiga Carbon Inclusions			Vaega fa'aopoopo ≤0.05%		Vaega fa'aopoopo ≤3%
Su'ega Sili Sili I luga o le Malamalama Maualuga			Leai		Fa'aopoopo umi≤1×wafer diameter
Sisi Chips Maualuluga I Malosiaga Malamalama			Leai se faatagaina ≥0.2mm lautele ma loloto		5 faatagaina, ≤1 mm taitasi
Silicon Surface Contamination I le Malosi Maualuga			Leai
afifiina			Tele-wafer kaseti po'o se atigipusa ta'itoatasi

Fa'amatalaga:

※ Fa'atapula'a fa'aletonu e fa'atatau i luga atoa o le ga'o, se'i vagana ai le pito e fa'ate'aina. # E tatau ona siaki na'o mata o Si foliga.

O le P-ituaiga 4H/6H-P 3C-N ituaiga 4-inisi SiC substrate ma le 〈111〉± 0.5 ° fa'asinomaga ma Zero MPD grade o lo'o fa'aaogaina lautele i fa'aoga eletise maualuga. O le lelei tele o le fa'avevelaina o le vevela ma le maualuga o le malepelepe eletise e fa'amalieina mo le eletise eletise, e pei o le maualuga-voltage ki, inverters, ma le eletise liliu, fa'agaoioi i tulaga ogaoga. E le gata i lea, o le tetee a le mea'ai i le maualuga o le vevela ma le pala e mautinoa ai le mautu o le faatinoga i siosiomaga faigata. O le saʻo 〈111〉± 0.5 ° faʻataʻitaʻiga e faʻaleleia ai le saʻo o le gaosiga, faʻaogaina mo masini RF ma faʻaoga maualuga, e pei o le radar ma masini fesoʻotaʻiga uaealesi.

O faʻamanuiaga o N-ituaiga SiC faʻapipiʻi substrates e aofia ai:

1. High Thermal Conductivity: Faʻafefeteina lelei o le vevela, faʻaogaina lelei mo siosiomaga maualuga-vevela ma faʻaoga malosi.
2. Voltage Malosi Maualuga: Faʻamautinoa le faʻatuatuaina o le faʻatinoga i le maualuga-voltage talosaga e pei o le paoa converters ma inverters.
3. Zero MPD (Micro Pipe Defect) Vasega: Faʻamautinoaina ni faʻaletonu laiti, maua ai le mautu ma le maualuga o le faʻatuatuaina i masini faʻaeletoroni taua.
4. Corrosion Resistance: Tumama i totonu o siosiomaga faigata, faʻamautinoa le umi o galuega i tulaga faigata.
5. Sa'o 〈111〉± 0.5 ° Fa'atonuga: Fa'ataga mo le fa'aogaina sa'o i le taimi o le gaosiga, fa'aleleia le fa'atinoga o masini i fa'aoga maualuga ma RF.

Aotelega, o le P-ituaiga 4H/6H-P 3C-N ituaiga 4-inisi SiC substrate ma 〈111〉± 0.5 ° fa'asinomaga ma Zero MPD grade o se mea maualuga-faatinoga lelei mo talosaga faaeletonika. O le lelei tele o le fa'avevelaina o le vevela ma le maualuga o le malepelepe eletise e fa'apena lelei mo mea fa'aeletonika e pei o su'ega eletise, fa'aliliu, ma fa'aliliu. O le Zero MPD grade e faʻamautinoa ai ni faʻaletonu laiti, e maua ai le faʻamaoni ma le mautu i masini taua. E le gata i lea, o le malosi o le substrate i le pala ma le maualuga o le vevela e mautinoa ai le tumau i siosiomaga faigata. Ole fa'atonuga sa'o 〈111〉± 0.5° e mafai ai ona fa'aoga sa'o ile taimi ole gaosiga, ma fa'apena ona fetaui lelei mo masini RF ma fa'aoga maualuga.