SiC substrate ituaiga-P 4H/6H-P 3C-N 4 inisi ma le mafiafia e 350um Vasega gaosiga Vasega Dummy
Laulau fa'asologa o le SiC substrate 4 inisi ituaiga P 4H/6H-P 3C-N
4 inisi le lautele o le SiliconMea Fa'apipi'i Carbide (SiC) Fa'amatalaga
| Vasega | Leai se gaosiga o le MPD Vasega (Z) Vasega) | Gaosiga Masani Vasega (P Vasega) | Vasega Fa'ata'ita'i (D Vasega) | ||
| Lapoa | 99.5 mm~100.0 mm | ||||
| Mafiafia | 350 μm ± 25 μm | ||||
| Fa'asinomaga o le Wafer | Ese mai le itu: 2.0°-4.0° agai atu i le [11]20] ± 0.5° mo le 4H/6H-P, On axis:〈111〉± 0.5° mo le 3C-N | ||||
| Mafiafia o le Micropipe | 0 cm-2 | ||||
| Tete'e | ituaiga-p 4H/6H-P | ≤0.1 Ωꞏcm | ≤0.3 Ωꞏcm | ||
| ituaiga-n 3C-N | ≤0.8 mΩꞏcm | ≤1 m Ωꞏcm | |||
| Fa'asinomaga Laulau Muamua | 4H/6H-P | - {1010} ± 5.0° | |||
| 3C-N | - {110} ± 5.0° | ||||
| Umi Mafolafola Autū | 32.5 mm ± 2.0 mm | ||||
| Umi Mafolafola Lona Lua | 18.0 mm ± 2.0 mm | ||||
| Fa'asinomaga Mafolafola Lona Lua | Fa'asaga i luga o le Silicon: 90° CW. mai le Prime flat±5.0° | ||||
| Tuusaunoaga o le Pito | 3 milimita | 6 milimita | |||
| LTV/TTV/Aufana/Vau | ≤2.5 μm/≤5 μm/≤15 μm/≤30 μm | ≤10 μm/≤15 μm/≤25 μm/≤40 μm | |||
| Fa'alavelave | Polani Ra≤1 nm | ||||
| CMP Ra≤0.2 nm | Ra≤0.5 nm | ||||
| Māvaevae o Pito i le Malamalama Malosi | Leai se tasi | Umi fa'aputu ≤ 10 mm, umi e tasi ≤2 mm | |||
| Papa Hex e ala i le Malamalama Malosi Maualuga | Eria fa'aputu ≤0.05% | Eria fa'aputu ≤0.1% | |||
| Vaega Polytype e ala i le Malamalama Malosi Maualuga | Leai se tasi | Eria fa'aputu ≤3% | |||
| Fa'aaofia o le Carbon Va'aia | Eria fa'aputu ≤0.05% | Eria fa'aputu ≤3% | |||
| Maosi o le Silikon i le Malamalama Malosi | Leai se tasi | Umi fa'aputu ≤1 × lautele o le wafer | |||
| Fa'amamago Maualuga le Pito i le Malamalama Malosi | E leai se mea e fa'atagaina ≥0.2mm le lautele ma le loloto | 5 fa'atagaina, ≤1 mm ta'itasi | |||
| Fa'aleagaina o le Silikon i luga e ala i le malosi tele | Leai se tasi | ||||
| Afifiina | Kaseti Wafer e tele pe Pusa Wafer e tasi | ||||
Fa'amatalaga:
※E fa'atatau tapula'a o fa'aletonu i le fogāeleele atoa o le apa se'i vagana ai le vaega e le aofia ai pito. # E tatau ona siaki na'o le mata o le Si ia maosi.
O le P-type 4H/6H-P 3C-N 4-inisi SiC substrate ma le mafiafia e 350 μm e faʻaaogaina lautele i le gaosiga o masini eletise ma masini eletise faʻaonaponei. Faatasi ai ma le lelei tele o le conductivity thermal, maualuga le breakdown voltage, ma le malosi o le teteʻe atu i siosiomaga faigata, o lenei substrate e fetaui lelei mo eletise eletise maualuga le faatinoga e pei o ki eletise maualuga, inverters, ma masini RF. O substrates e faʻaaogaina i le gaosiga tele, e faʻamautinoa ai le faʻatuatuaina ma le saʻo o le faʻatinoga o masini, lea e taua tele mo eletise eletise ma faʻaoga maualuga. O substrates e le o ni mea e manaʻomia, i le isi itu, e faʻaaogaina tele mo le faʻatulagaina o le faagasologa, suʻega o masini, ma le atinaʻeina o prototype, e fesoasoani e faʻatumauina le pulea lelei ma le tutusa o le faagasologa i le gaosiga o semiconductor.
Fa'amatalaga O fa'amanuiaga o mea fa'apipi'i N-type SiC e aofia ai
- Fa'avevela MaualugaO le fa'asa'olotoina lelei o le vevela e fetaui lelei ai le mea fa'apipi'i mo fa'aoga i le vevela maualuga ma le malosi maualuga.
- Voltage Malepelepe Maualuga: Lagolagoina le fa'agaioiga maualuga-voltage, ma fa'amautinoa ai le fa'atuatuaina i masini eletise ma masini RF.
- Tete'e i Siosiomaga FaigataE malosi i tulaga ogaoga e pei o le vevela maualuga ma siosiomaga e 'ele'elea, ma mautinoa ai le umi o le fa'atinoga.
- Sa'o lelei o le gaosiga: Mautinoa le maualuga o le tulaga lelei ma le fa'atuatuaina o le fa'atinoga i le gaosiga tele, talafeagai mo fa'aoga fa'apitoa o le eletise ma le RF.
- Vasega Fa'ata'ita'i mo Su'ega: E mafai ai ona fa'atulaga sa'o le fa'agasologa, fa'ata'ita'iga o masini, ma fa'ata'ita'iga e aunoa ma le fa'aleagaina o wafers o le tulaga gaosiga.
I le aotelega, o le P-type 4H/6H-P 3C-N 4-inisi SiC substrate ma le mafiafia e 350 μm e ofoina atu ni faʻamanuiaga taua mo faʻaoga eletise maualuga. O lona maualuga o le thermal conductivity ma le breakdown voltage e fetaui lelei mo siosiomaga maualuga le malosi ma le vevela maualuga, ae o lona teteʻe atu i tulaga faigata e faʻamautinoa ai le tumau ma le faʻatuatuaina. O le substrate e faʻamautinoa ai le saʻo ma le tutusa o le faʻatinoga i le gaosiga tele o eletise eletise ma masini RF. I le taimi nei, o le substrate dummy-grade e taua tele mo le faʻatulagaina o le faagasologa, suʻega o masini, ma le faʻataʻitaʻiga, e lagolagoina ai le pulea lelei ma le tutusa i le gaosiga o semiconductor. O nei foliga e avea ai substrates SiC ma mea e matua fetuʻunaʻi mo faʻaoga faʻapitoa.
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