Oloa
-
p-ituaiga 4H/6H-P 3C-N TYPE SIC mea'ai 4 inisi 〈111〉± 0.5°Zero MPD
-
SiC substrate P-ituaiga 4H/6H-P 3C-N 4inch ma le mafiafia o le 350um Gaosia vasega Dummy vasega
-
4H/6H-P 6inch SiC wafer Zero MPD vasega Gaosia Vasega Dummy Vasega
-
P-ituaiga SiC wafer 4H/6H-P 3C-N 6inisi mafiafia 350 μm ma le Primary Flat Orientation
-
Alumina ceramic arm custom Ceramic robotic lima
-
Sapphire tube KY Method all transparent Customizable
-
Al2O3 99.999% la'au masani safaira manino le ofuina 38×4.5×0.3mmt
-
Sapphire blade hair transplant e mafai ona fa'avasegaina mo fa'amoemoega fa'afoma'i
-
Lilac YAG meafaitino pa'u lanu viole i totonu o fa'asoa
-
TVG fa'agasologa ile quartz safaira BF33 wafer Glass wafer tu'i
-
Tasi Crystal Silicon Wafer Si Substrate Type N/P Filifiliga Silicon Carbide Wafer
-
N-Type SiC Composite Substrates Dia6inch High quality monocrystaline and low quality substrate