SiC Ingot Growth ogaumu mo SiC Crystal TSSG/LPE Metotia Tele-Diamita

Fa'amatalaga Puupuu:

XKH's liquid-phase silicon carbide ingot growth furnace o loʻo faʻaaogaina le TSSG (Top-Seeded Solution Growth) ma le LPE (Liquid Phase Epitaxy) tekinolosi, faʻapitoa mo le maualuga o le SiC faʻatupulaia tioata tasi. O le auala TSSG e mafai ai ona tuputupu aʻe le 4-8 inisi lapoa 4H / 6H-SiC ingots e ala i le saʻo o le vevela gradient ma fatu faʻasaʻoina le saoasaoa pulea, ae o le LPE auala faafaigofieina le tuputupu ae o le SiC epitaxial layers i lalo o le vevela, aemaise lava talafeagai mo ultra-maualalo defect epitaxial layers mafiafia. O lenei vai-vaega silicon carbide ingot tuputupu aʻe faiga ua faʻaaogaina ma le manuia i le gaosiga o fale gaosi oloa o tioata eseese SiC e aofia ai le 4H / 6H-N ituaiga ma le 4H / 6H-SEMI insulating ituaiga, tuʻuina atu fofo atoatoa mai meafaigaluega i faiga.


Vaega

Galuega Fa'avae

O le mataupu faavae autu o le vai-vaega silicon carbide ingot tuputupu aʻe e aofia ai le soloia maualuga-mama SiC mea mata i metala uʻamea (eg, Si, Cr) i le 1800-2100°C e fausia ai vaifofo tumu, sosoo ai ma le pulea o le tuputupu aʻe o tioata tasi SiC i tioata fatu e ala i le saʻo le vevela gradient ma le supersaturation tulafono faatonutonu. O lenei tekonolosi e sili ona talafeagai mo le gaosia o le mama maualuga (> 99.9995%) 4H / 6H-SiC tioata tasi ma le maualalo o le faaletonu (<100 / cm²), faʻafeiloaʻi manaʻoga faʻapitoa mo le eletise eletise ma masini RF. Ole faiga ole fa'atupuina ole vai e mafai ai ona fa'atonu sa'o ole ituaiga fa'ata'ita'i tioata (ituaiga N/P) ma le fa'atete'e e ala ile fa'atumauina o vaifofo lelei ma fa'asologa o le tuputupu a'e.

Vaega Autu

1. Faiga Fa'apitoa Fa'apitoa: Fa'amama graphite/tantalum tu'u fa'atasi, fa'afefeteina o le vevela> 2200°C, fa'asa'o ile SiC liusua pala.

2. Tele-sone faʻavevela Faiga: Faʻapipiʻi faʻamalosi / faʻavevelaina faʻatasi ma le saʻo o le vevela o le ± 0.5 ° C (1800-2100 ° C laina).

3. Fa'atonuga Fa'atonu: Pulea tapuni tapuni lua mo le fesuia'i fatu (0-50rpm) ma le si'itia (0.1-10mm/h).

4. Atmosphere Control System: Puipuiga o le argon / nitrogen maualuga-mama, faʻafetaui galuega mamafa (0.1-1atm).

5. Faiga Fa'atonu Fa'atonu: PLC + fa'aulufalega PC pule fa'atasi ma le mata'ituina o le tuputupu a'e o le taimi moni.

6. Fa'amalieina lelei Faiga: Fa'ailoga vai malulu mamanu fa'amautinoa le fa'agaioiga tumau tumau.

TSSG vs. LPE Fa'atusatusaga

Uiga TSSG Metotia LPE Metotia
Tuputupua Temp 2000-2100°C 1500-1800°C
Fuafuaga o le Tuputupu ae 0.2-1mm/h 5-50μm/h
Tele tioata 4-8 inisi ingots 50-500μm epi-papa
Talosaga Autu Sauniuniga o eleele Epi-lapisi masini eletise
Fa'aletonu le Density <500/cm² <100/cm²
Polytypes talafeagai 4H/6H-SiC 4H/3C-SiC

Talosaga Autu

1. Malosiaga Electronics: 6-inisi 4H-SiC substrates mo 1200V + MOSFETs / diodes.

2. 5G RF Devices: Semi-insulating SiC substrates mo nofoaga faavae PA.

3. Talosaga EV: Ultra-mafiafia (> 200μm) epi-layers mo modules-vaega taʻavale.

4. PV Inverters: substrates maualalo le faaletonu e mafai ai> 99% fa'aliliuga lelei.

Manuia Autu

1. Tulaga Fa'atekinolosi
1.1 Tu'ufa'atasiga Multi-Method Design
O lenei sic-vase SiC ingot tuputupu aʻe faiga fou tuʻufaʻatasia TSSG ma le LPE tioata tuputupu aʻe tekinolosi. O lo'o fa'aaogaina e le TSSG le fa'atupuina o vaifofo pito i luga ma le fa'afefeteina fa'afefete ma le fa'atonuga o le vevela (ΔT≤5 ℃/cm), fa'amalosia le tuputupu a'e mautu o le 4-8 inisi lapopo'a SiC ingots fa'atasi ai ma fua ta'itasi o le 15-20kg mo tioata 6H/4H-SiC. O lo'o fa'aogaina e le LPE le fa'aogaina lelei o le solvent (Si-Cr alloy system) ma le supersaturation control (±1%) e fa'atupu ai le maualuga o le maualuga o le epitaxial layers ma le fa'aletonu tele <100/cm² i le maualalo o le vevela (1500-1800 ℃).

1.2 Faiga Pulea Atamai
Faʻapipiʻiina i le 4th-generation smart growth control e faʻaalia ai:
• Mata'ituina le tele o spectral in-situ (400-2500nm le umi ole galu)
• Su'esu'eina le maualuga o le liusuavai leisa (±0.01mm sa'o)
• Pulea tapuni tapuni tapuni ta'amilosaga fa'avae CCD (<±1mm fe'avea'i)
• Fa'ata'ita'iga fa'aolaola fa'aola fa'aola ole AI (15% fa'asaoina ole malosi)

2. Fa'asologa o Fa'amanuiaga Fa'atinoga
2.1 TSSG Metotia Autu Malosi
• Tele-tele le gafatia: Lagolago e oo atu i le 8-inisi le tupu tioata ma> 99.5% lautele tutusa
• Ma'ale'a maualuga: Va'ese le mafiafia <500/cm², micropipe density <5/cm²
• Tulaga tutusa o le Doping: <8% fesuiaiga o le resistivity ituaiga n (4-inisi wafers)
• Fa'aleleia le fua o le tuputupu a'e: Fa'atonu 0.3-1.2mm/h, 3-5x vave atu nai lo metotia va'a

2.2 LPE Metotia Autu Malosi
• Epitaxy fa'aletonu tele: Feso'ota'iga tulaga maualuga <1×10¹¹cm⁻²·eV⁻¹
• Fa'atonu mafiafia sa'o: 50-500μm epi-lapisi ma <±2% fesuiaiga mafiafia
• Maualalo-vevela lelei: 300-500℃ maualalo ifo nai lo faiga CVD
• Fa'atupula'ia fausaga fa'alavelave: Lagolagoina fa'atasiga pn, fa'alavalava, ma isi.

3. Tulaga lelei o le gaosiga
3.1 Puleaina o Tau
• 85% fa'aoga mea mata'utia (vs. 60% masani)
• 40% maualalo le fa'aaogaina o le malosi (fa'atusatusa ile HVPE)
• 90% mea faigaluega i luga ole taimi (modelar design e faʻaitiitia ai le taimi ole taimi)

3.2 Fa'amautinoaga Tulaga
• 6σ fa'atonuga o faiga (CPK>1.67)
• Su'esu'e faaletonu i luga ole laiga (0.1μm iugafono)
• Fa'agasolo atoa fa'amaumauga e su'eina (2000+ ta'i taimi moni)

3.3 Fa'ateleina
• E fetaui ma 4H/6H/3C polytypes
• Fa'aleleia i 12-inisi fa'agasologa fa'aogaina
• Lagolago SiC / GaN hetero-integration

4. Tulaga Fa'aaogāga Alamanuia
4.1 Masini Malosi
• Su'ega maualalo-tetee (0.015-0.025Ω·cm) mo masini 1200-3300V
• Su'ega semi-insulating (>10⁸Ω·cm) mo fa'aoga RF

4.2 Fa'atekonolosi Fa'afou
• Feso'ota'iga fa'akomepiuta: Su'ega leo sili ona maualalo (1/f leo<-120dB)
• Si'osi'omaga ogaoga: tioata e tete'e i le fa'avevela (<5% fa'aleagaina pe a uma le fa'avelaina o le 1×10¹⁶n/cm²)

XKH Au'aunaga

1. Meafaigaluega Fa'apitoa: Fa'atulagaina TSSG/LPE fa'atulagaina faiga.
2. Fa'asologa o A'oa'oga: Polokalame fa'aa'oa'oga fa'apitoa.
3. Lagolago ina ua uma ona faʻatau atu: 24/7 tali faʻapitoa ma tausiga.
4. Turnkey Solutions: Auaunaga atoa alaleo mai le faʻapipiʻiina i le faʻagasologa o faʻamaoniga.
5. Tuuina atu Mea: 2-12 inisi SiC substrates / epi-wafers avanoa.

O fa'amanuiaga autu e aofia ai:
• E oo atu i le 8-inisi le malosi o le tuputupu ae tioata.
• Tulaga tutusa <0.5%.
• Taimi fa'aoga meafaigaluega >95%.
• 24/7 lagolago fa'apitoa.

Ogaumu tuputupu a'e SiC ingot 2
Ogaumu tuputupu a'e SiC ingot 3
Ogaumu tuputupu a'e SiC ingot 5

  • Muamua:
  • Sosoo ai:

  • Tusi lau savali iinei ma lafo mai ia i matou