3inch Dia76.2mm SiC substrates HPSI Prime Research ma Dummy grade

Conductive substrate: e faasino i le resistivity o le 15 ~ 30mΩ-cm silicon carbide substrate.O le silicon carbide epitaxial wafer e tupu mai i le conductive silicon carbide substrate e mafai ona toe faia i masini eletise, lea e masani ona faʻaaogaina i taavale malosi fou, photovoltaics, smart grids, ma felauaiga nofoaafi.

Semi-insulate substrate faasino i le resistivity maualuga atu nai lo le 100000Ω-cm silicon carbide substrate, e masani ona faaaogaina i le gaosiga o le gallium nitride microwave masini alalaupapa leitio, o le faavae o le fanua fesootaiga uaealesi.

O se vaega autu i le tulaga o fesootaiga uaealesi.

Silicon carbide conductive ma semi-insulating substrates o loʻo faʻaaogaina i le tele o masini eletise ma masini eletise, e aofia ai ae le gata i mea nei:

High-power semiconductor device (conductive): Silicon carbide substrates e maualuga le malepelepe malosi fanua ma le vevela conductivity, ma e talafeagai mo le gaosiga o transistors mana maualuga ma diodes ma isi masini.

RF mea fa'aeletoroni (semi-insulated): Silicon Carbide substrates e maualuga le suiga o le saoasaoa ma le fa'apalepale malosi, e talafeagai mo fa'aoga e pei o RF power amplifiers, masini microwave ma suiga maualuga.

Optoelectronic masini (semi-insulated): Silicon carbide substrates o loʻo i ai le va tele o le malosi ma le maualuga o le mafanafana, e talafeagai mo le faia o photodiodes, solar cell ma laser diodes ma isi masini.

Su'e vevela (conductive): Silicon carbide substrates o loʻo i ai le maualuga o le faʻaogaina o le vevela ma le faʻamautuina o le vevela, e talafeagai mo le gaosiga o masini vevela maualuga ma mea e fua ai le vevela.

O le gaosiga o le gaosiga ma le faʻaogaina o le silicon carbide conductive ma semi-insulating substrates o loʻo i ai le tele o fanua ma gafatia, e maua ai avanoa fou mo le atinaʻeina o masini eletise ma masini eletise.