Alafua
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4H-N 8 inisi SiC substrate wafer Silicon Carbide Dummy Research grade 500um mafiafia
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4H-N/6H-N SiC Wafer Su'esu'ega gaosiga Dummy vasega Dia150mm Silicon carbide substrate
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12 inisi SIC substrate silicon carbide vasega muamua lautele 300mm lapopo'a tele 4H-N Talafeagai mo le malosi maualuga masini dissipation vevela
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Dia300x1.0mmt Mafiafia Safaira Wafer C-Vaeleele SSP/DSP
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8 inisi 200mm Safaira substrate safaira mafi manifinifi mafiafia 1SP 2SP 0.5mm 0.75mm
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8 inisi SiC silicon carbide wafer 4H-N ituaiga 0.5mm gaosiga vasega su'esu'ega vasega aganu'u polesi substrate
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HPSI SiC wafer dia:3inisi mafiafia:350um± 25 µm mo Malosiaga Fa'aeletonika
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tioata tasi Al2O3 99.999% Dia200mm safaira wafers 1.0mm 0.75mm mafiafia
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156mm 159mm 6 inisi Safaira Wafer mo ave C-Vaeleele DSP TTV
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C/A/M axis 4 inisi safaira wafers tioata tasi Al2O3,SSP DSP maualuga maaa safaira substrate
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3inisi Maualuga mama Semi-Insulating （HPSI）SiC wafer 350um Dummy grade Prime grade
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P-ituaiga SiC substrate SiC wafer Dia2inch oloa fou