Substrate
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12 inisi SIC substrate silicon carbide prime grade diameter 300mm lapo'a tele 4H-N Talafeagai mo masini eletise maualuga e fa'ata'ape'apeina le vevela
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Masini Safaira Mamafa Dia300x1.0mmt C-Plane SSP/DSP
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HPSI SiC wafer diameter: 3 inisi mafiafia: 350um± 25 µm mo le Power Electronics
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8 inisi 200mm le mafiafia o le vali safaira, manifinifi ma le mafiafia o le vali safaira 1SP 2SP 0.5mm 0.75mm
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8 inisi SiC silicon carbide wafer 4H-N ituaiga 0.5mm vasega gaosiga suʻesuʻega vasega faʻapitoa faʻapipiʻi
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Masini fa'a-safaira Al2O3 tioata e tasi 99.999% Dia200mm, mafiafia 1.0mm 0.75mm
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156mm 159mm 6 inisi Sapphire Wafer mo le C-Plane DSP TTV
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C/A/M axis 4 inisi safaira wafers tasi tioata Al2O3, SSP DSP substrate safaira maualuga le maaa
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3 inisi mama maualuga Semi-Insulating (HPSI) SiC wafer 350um Dummy grade Prime grade
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Oloa fou mo le substrate SiC ituaiga-P SiC wafer Dia2inch
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8inisi 200mm Silicon Carbide SiC Wafers ituaiga 4H-N Vasega gaosiga 500um le mafiafia
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2Inisi 6H-N Silicon Carbide Substrate Sic Wafer Fa'alua Fa'apupulaina Conductive Prime Grade Mos Grade