Substrate
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Wafer InSb 2 inisi 3 inisi e le'i fa'apipi'iina le ituaiga Ntype P fa'atulagaina 111 100 mo Mea e Su'e ai le Infrared
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Wafer Indium Antimonide (InSb) ituaiga N ituaiga P ituaiga Epi ua sauni e le'i fa'apipi'iina Te doped po'o Ge doped 2 inisi 3 inisi 4 inisi le mafiafia
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SiC wafer 4H-N 6H-N HPSI 4H-semi 6H-semi 4H-P 6H-P 3C ituaiga 2inch 3inch 4inch 6inch 8inch
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maa safaira 3 inisi 4 inisi 6 inisi Monocrystal CZ KY metotia Fetuuna'i
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2 inisi Sic silicon carbide substrate 6H-N Ituaiga 0.33mm 0.43mm fa'apala itu lua Maualuga le fa'avevela maualalo le fa'aaogaina o le eletise
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GaAs epitaxial wafer substrate gallium arsenide wafer power laser wavelength 905nm mo togafitiga faafoma'i laser
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GaAs laser epitaxial wafer 4 inisi 6 inisi VCSEL fa'atulagaina o le lua luga laser wavelength 940nm single junction
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2 inisi 3 inisi 4 inisi InP epitaxial wafer substrate APD light detector mo feso'ota'iga fiber optic po'o LiDAR
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mama safaira e faia i mea safaira fa'apitoa. Ma'a'a manino ma fetu'una'i Mohs e 9.
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mama safaira mama safaira atoa e faia atoa mai le safaira mea safaira manino e faia i le fale suʻesuʻe
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Ma'a safaira lapo'a 4 inisi × 80mm Monocrystalline Al2O3 99.999% Crystal Tasi
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Sapphire Prism Sapphire Lens Maualuga le manino Al2O3 BK7 JGS1 JGS2 Meafaitino Meafaigaluega Optika