6inch 150mm Silicon Carbide SiC Wafers 4H-N ituaiga mo MOS poʻo SBD Production Research ma Dummy grade

6inch 150mm Silicon Carbide SiC Wafers 4H-N ituaiga mo MOS poʻo SBD Gaosiga Suʻesuʻega ma Dummy vasega Faʻaalia ata

Fa'amatalaga Puupuu:

O le 6-inisi silicon carbide substrate tioata tasi o se mea maualuga-faatinoga faʻatasi ma mea faʻapitoa faʻapitoa ma vailaʻau. O lo'o gaosia mai le silicon carbide carbide tasi mea tioata, e fa'aalia ai le maualuga o le vevela, fa'amautu fa'ainisinia, ma le maualuga o le vevela. O lenei substrate, faia i faiga sa'o gaosiga ma mea e sili ona lelei, ua avea ma mea e sili ona fiafia i ai mo le fausiaina o masini eletise maualuga i vaega eseese.

Auina imeli ia matou

Fa'amatalaga Oloa

Faailoga o oloa

Talosaga Fields

O le 6-inisi silicon carbide substrate tioata tasi e faia se sao taua i le tele o alamanuia. Muamua, e faʻaaogaina lautele i le semiconductor alamanuia mo le fausiaina o masini eletise maualuga e pei o transistors eletise, fesoʻotaʻiga tuʻufaʻatasia, ma eletise eletise. O le maualuga o le vevela ma le maualuga o le vevela e mafai ai ona sili atu le vevela, e maua ai le faʻaleleia atili ma le faʻamaoni. Lona lua, e taua tele fa'ama'i carbide silicon i fanua su'esu'e mo le atina'eina o mea fou ma masini. E le gata i lea, o le silicon carbide wafer e maua ai le tele o talosaga i le matata o le optoelectronics, e aofia ai le gaosiga o LED ma laser diodes.

Fa'amatalaga o oloa

O le 6-inisi silicon carbide mea tioata tasi e iai le lautele o le 6 inisi (tusa ma le 152.4 mm). Le roughness luga o Ra <0.5 nm, ma le mafiafia o le 600 ± 25 μm. O le substrate e mafai ona faʻapitoa i le N-ituaiga poʻo le P-ituaiga conductivity, faʻavae i luga o manaʻoga o tagata faatau. E le gata i lea, o loʻo faʻaalia ai le tulaga faʻapitoa faʻainisinia, e mafai ona tatalia le mamafa ma le vibration.

Diamita		150±2.0mm（6inisi）
mafiafia		350 μm±25μm
Fa'atonuga		I luga ole axis: <0001>±0.5°		Tu'u ese: 4.0° agai i le 1120±0.5°
Polytype		4H
Tete'e(Ω·cm)	4H-N	0.015~0.028 Ω·cm/0.015~0.025ohm·cm
	4/6H-SI	>1E5
Primary flat orientation		{10-10}±5.0°
Muamua mafolafola umi (mm)		47.5 mm±2.5 mm
pito		Chamfer
TTV/Afanau/A'au (um)		≤15 /≤40 /≤60
AFM Luma (Si-foliga)		Polani Ra≤1 nm
		CMP Ra≤0.5 nm
LTV		≤3μm(10mm*10mm)	≤5μm(10mm*10mm)		≤10μm(10mm*10mm)
TTV		≤5μm	≤10μm		≤15μm
Pa'u moli/lua/ta'eta'e/fa'aleaga/pisa/striations		Leai	Leai		Leai
indents		Leai	Leai		Leai

O le 6-inch silicon carbide single crystal substrate o se mea maualuga-fa'atinoga fa'aaogaina lautele i le semiconductor, su'esu'ega, ma alamanuia optoelectronics. E ofoina atu le lelei tele o le vevela, faʻamautu faʻainisinia, ma le maualuga o le vevela, faʻaogaina mo le fausiaina o masini eletise eletise ma suʻesuʻega fou. Matou te tuʻuina atu faʻamatalaga eseese ma filifiliga faʻapitoa e faʻafetaui ai manaoga eseese o tagata faʻatau.Fa'afeso'ota'i i matou mo nisi fa'amatalaga i luga o fa'ama'i carbide silicon!