6 inisi 150mm Silicon Carbide SiC Wafers ituaiga 4H-N mo Su'esu'ega Gaosiga MOS po'o SBD ma le vasega Dummy
Fanua Talosaga
O le 6-inisi silicon carbide single crystal substrate e taua tele i le tele o alamanuia. Muamua, e lautele lona faʻaaogaina i le alamanuia semiconductor mo le gaosia o masini eletise malolosi e pei o transistors eletise, integrated circuits, ma power modules. O lona maualuga o le thermal conductivity ma le teteʻe atu i le vevela maualuga e mafai ai ona sili atu le faʻasalalauina o le vevela, ma iu ai ina faʻaleleia atili le lelei ma le faʻatuatuaina. Lua, o silicon carbide wafers e taua tele i vaega o suʻesuʻega mo le atinaʻeina o meafaitino ma masini fou. E le gata i lea, o le silicon carbide wafer e tele ona faʻaaogaina i le matata o optoelectronics, e aofia ai le gaosiga o LEDs ma laser diodes.
Fa'amatalaga o le Oloa
O le 6-inisi le lautele o le silicon carbide single crystal substrate e 6 inisi le lautele (pe tusa ma le 152.4 mm). O le mageso o le luga e Ra < 0.5 nm, ma o le mafiafia e 600 ± 25 μm. E mafai ona fa'apitoa le substrate i le N-type po'o le P-type conductivity, e fa'atatau i mana'oga o tagata fa'atau. E le gata i lea, e fa'aalia ai le mautu fa'amekanika tulaga ese, e mafai ona tatalia le mamafa ma le gatete.
| Lapoa | 150±2.0mm（6 inisi） | ||||
| Mafiafia | 350 μm±25μm | ||||
| Fa'asinomaga | I luga o le axis： <0001>±0.5° | Ese le itu：4.0° agai atu i le 1120±0.5° | |||
| Polytype | 4H | ||||
| Tete'e (Ω·cm) | 4H-N | 0.015~0.028 Ω·cm/0.015~0.025ohm·cm | |||
| 4/6H-SI | >1E5 | ||||
| Fa'atulagaga mafolafola autū | {10-10}±5.0° | ||||
| Umi mafolafola autū (mm) | 47.5 mm±2.5 mm | ||||
| Pito | Chamfer | ||||
| TTV/Aufana/Vau (um) | ≤15 /≤40 /≤60 | ||||
| AFM Luma (Si-mata) | Polani Ra≤1 nm | ||||
| CMP Ra≤0.5 nm | |||||
| LTV | ≤3μm (10mm * 10mm) | ≤5μm (10mm * 10mm) | ≤10μm (10mm * 10mm) | ||
| TTV | ≤5μm | ≤10μm | ≤15μm | ||
| Pa'u moli/pupu/māvaevae/pisi/ila/ma'ila | Leai se tasi | Leai se tasi | Leai se tasi | ||
| fa'asolo i totonu | Leai se tasi | Leai se tasi | Leai se tasi | ||
O le 6-inisi silicon carbide single crystal substrate o se mea e maualuga lona faatinoga e faaaogaina lautele i semiconductor, suesuega, ma optoelectronics. E ofoina atu le lelei tele o le conductivity thermal, mautu fa'amekanika, ma le tete'e atu i le vevela maualuga, ma avea ai ma mea e talafeagai mo le gaosiga o masini eletise malosi ma suesuega o mea fou. Matou te tu'uina atu fa'amatalaga eseese ma filifiliga fa'apitoa e fa'afetaui ai mana'oga eseese a tagata fa'atau.Fa'afeso'ota'i matou mo nisi fa'amatalaga e uiga i wafers silicon carbide!
Ata Auiliili
