SiC
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4H-N 8 inisi SiC substrate wafer Silicon Carbide Dummy Research grade 500um mafiafia
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4H-N/6H-N SiC Wafer Su'esu'ega gaosiga Dummy vasega Dia150mm Silicon carbide substrate
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12 inisi SIC substrate silicon carbide vasega muamua lautele 300mm lapopo'a tele 4H-N Talafeagai mo le malosi maualuga masini dissipation vevela
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8 inisi SiC silicon carbide wafer 4H-N ituaiga 0.5mm gaosiga vasega su'esu'ega vasega aganu'u polesi substrate
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HPSI SiC wafer dia:3inisi mafiafia:350um± 25 µm mo Malosiaga Fa'aeletonika
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3inisi Maualuga mama Semi-Insulating （HPSI）SiC wafer 350um Dummy grade Prime grade
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P-ituaiga SiC substrate SiC wafer Dia2inch oloa fou
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8inch 200mm Silicon Carbide SiC Wafers 4H-N ituaiga Gaosia vasega 500um mafiafia
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2Inisi 6H-N Silicon Carbide Substrate Sic Wafer Faila Faila Fa'aa'oa'i Palemia Vasega Mos Vasega
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SiC fa'ai'u sima lima tu'uina atu mo le ga'o fa'amomoli
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SiC ipu sima/ fata mo le 4 inisi 6 inisi mea wafer u'u mo ICP
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3 inisi le mama maualuga (le fa'asaoina) Silicon Carbide Wafers Semi-Insulating Sic Substrates (HPSl)