SiC
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12 inisi SIC substrate silicon carbide vasega muamua lautele 300mm lapopo'a tele 4H-N Talafeagai mo le malosi maualuga masini dissipation vevela
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8 inisi SiC silicon carbide wafer 4H-N ituaiga 0.5mm gaosiga vasega su'esu'ega vasega aganu'u polesi substrate
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HPSI SiC wafer dia:3inisi mafiafia:350um± 25 µm mo Malosiaga Fa'aeletonika
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3inisi Maualuga mama Semi-Insulating （HPSI）SiC wafer 350um Dummy grade Prime grade
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P-ituaiga SiC substrate SiC wafer Dia2inch oloa fou
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8inch 200mm Silicon Carbide SiC Wafers 4H-N ituaiga Gaosia vasega 500um mafiafia
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2Inisi 6H-N Silicon Carbide Substrate Sic Wafer Faila Faila Fa'aa'oa'i Palemia Vasega Mos Vasega
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Silicon Carbide (SiC) Tasi-Crystal Substrate - 10 × 10mm Wafer
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4H-N HPSI SiC wafer 6H-N 6H-P 3C-N SiC Epitaxial wafer mo MOS po'o SBD
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SiC Epitaxial Wafer mo Masini Malosiaga - 4H-SiC, N-ituaiga, Maualalo le Defect Density
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4H-N Type SiC Epitaxial Wafer High Voltage High Frequency
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3 inisi le mama maualuga (le fa'asaoina) Silicon Carbide Wafers semi-Insulating Sic Substrates (HPSl)