SiC
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12 inisi SIC substrate silicon carbide prime grade diameter 300mm lapo'a tele 4H-N Talafeagai mo masini eletise maualuga e fa'ata'ape'apeina le vevela
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8 inisi SiC silicon carbide wafer 4H-N ituaiga 0.5mm vasega gaosiga suʻesuʻega vasega faʻapitoa faʻapipiʻi
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HPSI SiC wafer diameter: 3 inisi mafiafia: 350um± 25 µm mo le Power Electronics
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3 inisi mama maualuga Semi-Insulating (HPSI) SiC wafer 350um Dummy grade Prime grade
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Oloa fou mo le substrate SiC ituaiga-P SiC wafer Dia2inch
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8inisi 200mm Silicon Carbide SiC Wafers ituaiga 4H-N Vasega gaosiga 500um le mafiafia
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2Inisi 6H-N Silicon Carbide Substrate Sic Wafer Fa'alua Fa'apupulaina Conductive Prime Grade Mos Grade
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Wafer 12-Inisi 4H-SiC mo matatioata AR
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HPSI SiC Wafer ≥90% Transmittance Optical Grade mo Matatioata AI/AR
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Semi-Insulating Silicon Carbide (SiC) Substrate Maualuga Mama mo Matatioata Ar
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4H-SiC Epitaxial Wafers mo Ultra-High Voltage MOSFETs (100–500 μm, 6 inisi)
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SICOI (Silicon Carbide i luga o le Insulator) Wafers SiC Film ON Silicon