SiC silicon carbide wafer SiC wafer 4H-N 6H-N HPSI (Mama maualuga Semi-Insulating) 4H/6H-P 3C -n ituaiga 2 3 4 6 8 inisi avanoa
Meatotino
4H-N ma le 6H-N (N-ituaiga SiC Wafers)
Talosaga:Fa'aaoga muamua i le eletise eletise, optoelectronics, ma le maualuga o le vevela.
Aotelega:50.8 mm i le 200 mm.
Mafiafia:350 μm ± 25 μm, faʻatasi ai ma le mafiafia filifiliga o le 500 μm ± 25 μm.
Resistivity:N-ituaiga 4H/6H-P: ≤ 0.1 Ω·cm (Z-grade), ≤ 0.3 Ω·cm (P-grade); N-ituaiga 3C-N: ≤ 0.8 mΩ·cm (Z-grade), ≤ 1 mΩ·cm (P-grade).
Talatala:Ra ≤ 0.2 nm (CMP poʻo MP).
Malosi'i paipa (MPD):<1 ea/cm².
TTV: ≤ 10 μm mo tamita uma.
Laupepa: ≤ 30 μm (≤ 45 μm mo wafers 8-inisi).
Tuusaunoaga pito:3 mm i le 6 mm e fa'atatau i le ituaiga wafer.
afifiina:Kaseti fa'ama'i fa'atele po'o se atigipusa masimea ta'itasi.
Ohter avanoa tele 3inch 4inch 6inch 8inch
HPSI (SiC Wafers Semi-Insulating maualuga mama)
Talosaga:Faʻaaogaina mo masini e manaʻomia ai le maualuga o le teteʻe ma le faʻatinoga mautu, e pei o masini RF, faʻaoga photonic, ma masini.
Aotelega:50.8 mm i le 200 mm.
Mafiafia:O le mafiafia masani o le 350 μm ± 25 μm ma filifiliga mo wafers mafiafia e oʻo atu i le 500 μm.
Talatala:Ra ≤ 0.2 nm.
Malosi'i paipa (MPD): ≤ 1 ea/cm².
Resistivity:Teteʻe maualuga, e masani ona faʻaaogaina i faʻaoga semi-insulating.
Laupepa: ≤ 30 μm (mo laʻititi laʻititi), ≤ 45 μm mo lapoa tetele.
TTV: ≤ 10 μm.
Ohter avanoa tele 3inch 4inch 6inch 8inch
4H-P、6H-P&3C SiC wafer(P-ituaiga SiC Wafers)
Talosaga:Fa'amuamua mo le mana ma le maualuga o masini.
Aotelega:50.8 mm i le 200 mm.
Mafiafia:350 μm ± 25 μm poʻo filifiliga faʻapitoa.
Resistivity:P-ituaiga 4H/6H-P: ≤ 0.1 Ω·cm (Z-grade), ≤ 0.3 Ω·cm (P-grade).
Talatala:Ra ≤ 0.2 nm (CMP poʻo MP).
Malosi'i paipa (MPD):<1 ea/cm².
TTV: ≤ 10 μm.
Tuusaunoaga pito:3 mm i le 6 mm.
Laupepa: ≤ 30 μm mo laʻititi laʻititi, ≤ 45 μm mo lapopoa tetele.
Ole tele avanoa 3inch 4inch 6inch5×5 10×10
Fa'ailoga Fa'amaumauga o Fa'amaumauga
| Meatotino | 2 inisi | 3 inisi | 4inisi | 6 inisi | 8 inisi | |||
| Ituaiga | 4H-N/HPSI/ | 4H-N/HPSI/ | 4H-N/HPSI//4H/6H-P/3C; | 4H-N/HPSI//4H/6H-P/3C; | 4H-N/HPSI/4H-SEMI | |||
| Diamita | 50.8 ± 0.3 mm | 76.2±0.3mm | 100±0.3mm | 150±0.3mm | 200 ± 0.3 mm | |||
| mafiafia | 330 ± 25 um | 350 ±25 um | 350 ±25 um | 350 ±25 um | 350 ±25 um | |||
| 350±25um； | 500±25um | 500±25um | 500±25um | 500±25um | ||||
| pe fa'apitoa | pe fa'apitoa | pe fa'apitoa | pe fa'apitoa | pe fa'apitoa | ||||
| Talatala | Ra ≤ 0.2nm | Ra ≤ 0.2nm | Ra ≤ 0.2nm | Ra ≤ 0.2nm | Ra ≤ 0.2nm | |||
| A'ai | ≤ 30um | ≤ 30um | ≤ 30um | ≤ 30um | ≤45um | |||
| TTV | ≤ 10um | ≤ 10um | ≤ 10um | ≤ 10um | ≤ 10um | |||
| Su'e/Eli | CMP/MP | |||||||
| MPD | <1ea/cm-2 | <1ea/cm-2 | <1ea/cm-2 | <1ea/cm-2 | <1ea/cm-2 | |||
| foliga | lapotopoto, mafolafola 16mm;OF umi 22mm; O LE Umi 30/32.5mm; O LE Umi47.5mm; NOTCH; NOTCH; | |||||||
| Bevel | 45°, SEMI Spec; C Faiga | |||||||
| Vasega | Gaosiga vasega mo MOS&SBD; Vasega su'esu'e ; Fa'ailoga Dummy, Fu'a wafer Grade | |||||||
| Fa'amatalaga | Diameter, Mafiafia, Faʻatonuga, faʻamatalaga i luga e mafai ona faʻatulagaina i luga o lau talosaga | |||||||
Talosaga
·Malosiaga Faaeletonika
N ituaiga SiC wafers e taua tele i masini eletise eletise ona o lo latou gafatia e taulimaina le maualuga o le voltage ma le maualuga. E masani ona faʻaaogaina i le eletise, faʻaliliuga, ma taʻavale afi mo pisinisi e pei o le malosi faʻafouina, taʻavale eletise, ma le faʻaogaina o fale gaosi oloa.
· Optoelectronics
N ituaiga SiC meafaitino, aemaise lava mo optoelectronic talosaga, o loʻo faʻaaogaina i masini e pei o moli-emitting diodes (LEDs) ma laser diodes. O le maualuga o le vevela ma le vaeluaga o fusi e fa'apena ona lelei mo masini optoelectronic maualuga.
·Talosaga Maualuluga
4H-N 6H-N SiC wafers e fetaui lelei mo siosiomaga vevela maualuga, e pei o masini ma masini eletise o loʻo faʻaaogaina i le vateatea, taʻavale, ma fale gaosi oloa e faʻafefe ai le vevela ma le mautu i le maualuga o le vevela e taua tele.
·RF masini
4H-N 6H-N SiC wafers o loʻo faʻaaogaina i masini leitio (RF) e faʻaogaina i laina maualuga. O loʻo faʻaaogaina i faiga faʻafesoʻotaʻi, tekonolosi radar, ma fesoʻotaʻiga satelite, lea e manaʻomia ai le malosi maualuga ma le faʻatinoga.
·Talosaga Photonic
I photonics, SiC wafers e faʻaaogaina mo masini e pei o photodetectors ma modulators. O mea fa'apitoa fa'apitoa e mafai ai ona aoga i le fa'atupuina o le malamalama, fa'avasegaina, ma le iloa i faiga fa'afeso'ota'i fa'apitoa ma masini ata.
·Sensors
SiC wafers e fa'aaogaina i le tele o fa'aoga fa'alogo, aemaise i si'osi'omaga faigata e ono fa'aletonu ai isi mea. O nei mea e aofia ai le vevela, mamafa, ma vailaʻau vailaʻau, e taua i fanua e pei o taʻavale, suauʻu & kesi, ma le mataʻituina o le siosiomaga.
·Faiga o Ta'avale Fa'aeletise
Tekinolosi SiC e tele sona sao i taavale eletise e ala i le faʻaleleia atili o le lelei ma le faʻatinoina o faiga taʻavale. Faatasi ai ma le SiC eletise eletise, e mafai e taʻavale eletise ona maua le ola sili atu o le maa, faʻavave taimi faʻaalu, ma sili atu le malosi.
·Fa'amatalaga Mata'utia ma Fa'aliliuga Photonic
I tekinolosi fa'atekonolosi fa'apitoa, e fa'aaogaina siC wafers mo le fa'atupuina o masini fa'apitoa mo fa'aoga i robotics, masini fa'afoma'i, ma le mata'ituina o le si'osi'omaga. I photonic converters, o lo'o fa'aogaina meatotino a le SiC ina ia mafai ai ona fa'aliliu lelei le malosi o le eletise i fa'ailoga mata, lea e taua tele i feso'otaiga ma feso'ota'iga televave i luga ole laiga.
Q&A
Q：O le a le 4H i le 4H SiC?
A： "4H" i le 4H SiC o loʻo faʻatatau i le fausaga tioata o le silicon carbide, aemaise lava o le hexagonal form ma faʻavae (H). O le "H" o loʻo faʻaalia ai le ituaiga polytype hexagonal, faʻaeseese mai isi polytypes SiC pei ole 6H poʻo le 3C.
Q：O le a le fa'avevela vevela o le 4H-SiC?
A: O le conductivity vevela o le 4H-SiC (Silicon Carbide) e tusa ma le 490-500 W / m · K i le vevela potu. Ole maualuga ole fa'avevela ole fa'avevela e fa'amalieina mo fa'aoga ile eletise eletise ma siosiomaga vevela maualuga, lea e taua tele ai le fa'amama lelei ole vevela.
