SiC substrate 3inch 350um mafiafia HPSI ituaiga Prime Grade Dummy vasega
Meatotino
Parameter | Gaosia Vasega | Vasega Suesuega | Fa'ailoga Fa'ata | Vaega |
Vasega | Gaosia Vasega | Vasega Suesuega | Fa'ailoga Fa'ata | |
Diamita | 76.2 ± 0.5 | 76.2 ± 0.5 | 76.2 ± 0.5 | mm |
mafiafia | 500 ± 25 | 500 ± 25 | 500 ± 25 | µm |
Fa'asinomaga ole Wafer | I luga ole tulaga: <0001> ± 0.5° | I luga ole tulaga: <0001> ± 2.0° | I luga ole tulaga: <0001> ± 2.0° | tikeri |
Malosi'i paipa (MPD) | ≤ 1 | ≤ 5 | ≤ 10 | cm−2^-2−2 |
Tete'e eletise | ≥ 1E10 | ≥ 1E5 | ≥ 1E5 | Ω·cm |
Fa'amamafa | Fa'asalaina | Fa'asalaina | Fa'asalaina | |
Primary Flat Orientation | {1-100} ± 5.0° | {1-100} ± 5.0° | {1-100} ± 5.0° | tikeri |
Primary Flat Umi | 32.5 ± 3.0 | 32.5 ± 3.0 | 32.5 ± 3.0 | mm |
Lua Mafolafola Umi | 18.0 ± 2.0 | 18.0 ± 2.0 | 18.0 ± 2.0 | mm |
Tulaga Lua mafolafola | 90° CW mai mafolafola muamua ± 5.0° | 90° CW mai mafolafola muamua ± 5.0° | 90° CW mai mafolafola muamua ± 5.0° | tikeri |
Tuusaunoaga Tupito | 3 | 3 | 3 | mm |
LTV/TTV/Bow/Warp | 3 / 10 / ±30 / 40 | 3 / 10 / ±30 / 40 | 5 / 15 / ±40 / 45 | µm |
Fa'asaa o luga | Si-foliga: CMP, C-foliga: Faila | Si-foliga: CMP, C-foliga: Faila | Si-foliga: CMP, C-foliga: Faila | |
Ta'eta'e (Malu Mamalu) | Leai | Leai | Leai | |
Papatusi Hex (Malamalama Maualuluga) | Leai | Leai | Vaega fa'aopoopo 10% | % |
Avanoa Polytype (Malamalama Malosi Tele) | Vaega fa'aopoopo 5% | Vaega fa'aopoopo 20% | Vaega fa'aopoopo 30% | % |
Mata'i (Malu Malosi) | ≤ 5 maosiosi, fa'aputu umi ≤ 150 | ≤ 10 maosiosi, fa'aputu umi ≤ 200 | ≤ 10 maosiosi, fa'aputu umi ≤ 200 | mm |
Tu'u pito | Leai ≥ 0.5 mm lautele/loloto | 2 faatagaina ≤ 1 mm lautele/loloto | 5 fa'atagaina ≤ 5 mm lautele/loloto | mm |
Fa'aleagaina i luga | Leai | Leai | Leai |
Talosaga
1. Eletonika Malosi Maualuga
O le maualuga o le faʻauluina o le vevela ma le vaeluaga lautele o siC wafers e faʻamalieina mo masini maualuga, maualuga-vave:
●MOSFETs ma IGBTs mo le suiga o le mana.
●Faiga eletise eletise eletise eletise, e aofia ai faʻaliliuga ma faʻaulu.
●Smart grid infrastructure ma faiga malosi fa'afouina.
2. RF ma Microwave Systems
SiC substrates e mafai ai ona fa'aoga RF ma microwave ma fa'aitiitia fa'ailo itiiti:
●Fesootaiga ma satelite faiga.
●Aerospace radar faiga.
●Vaega feso'ota'iga 5G maualuga.
3. Optoelectronics ma Sensors
O mea fa'apitoa a SiC e lagolagoina le tele o fa'aoga optoelectronic:
●UV detectors mo le mataʻituina o le siosiomaga ma le faʻalogoina o fale gaosi oloa.
●LED ma leisa substrates mo moli malo malo ma meafaigaluega saʻo.
●Su'esu'e maualuga-vevela mo le aerospace ma fale ta'avale.
4. Suesuega ma Atina'e
O le eseese o togi (Gaosiga, Su'esu'ega, Dummy) e mafai ai ona fa'ata'ita'i fa'ata'ita'i ma masini fa'ata'ita'i ile a'oga ma alamanuia.
Tulaga lelei
●Fa'atuatuaina:Lelei le tetee ma le mautu i vasega uma.
● Fa'apitoa:Fa'atonuga ma mafiafia e fetaui ma mana'oga eseese.
●Mama maualuga:O fatuga e le fa'asaoina e fa'amautinoa ai le la'ititi o suiga fa'atatau i le mama.
● Fa'asalaina:Faʻafeiloaʻi manaʻoga o gaosiga tetele ma suʻesuʻega faʻataʻitaʻi.
O le 3-inisi maualuga mama SiC wafers o lou faitotoa i masini maualuga-faʻatinoga ma faʻagasologa faʻatekonolosi fou. Mo faʻamatalaga ma faʻamatalaga auiliili, faʻafesoʻotaʻi matou i le aso.
Aotelega
O le 3-inisi High Purity Silicon Carbide (SiC) Wafers, o loʻo maua i le Gaosiga, Suʻesuʻega, ma le Dummy Grades, o mea faʻapitoa e faʻatulagaina mo eletise eletise maualuga, RF/microwave system, optoelectronics, ma R&D alualu i luma. O lo'o fa'aalia e nei wafers e le'i fa'asaoina, semi-insulating mea fa'atasi ma le fa'atosina lelei (≥1E10 Ω·cm mo le Vasega Gaosia), maualalo le tele o le micropipe (≤1 cm−2^-2−2), ma le tulaga tulaga ese. O lo'o fa'amaninoina mo fa'aoga maualuga, e aofia ai le liua o le eletise, feso'ota'iga, UV sensing, ma tekonolosi LED. Fa'atasi ai ma a'oa'oga fa'apitoa, fa'aa'oa'oga fa'avevela sili, ma mea fa'ainisinia malosi, o nei siC wafers e mafai ai ona lelei, fa'atuatuaina masini faufale ma fa'ato'aga fa'ato'aga i totonu o alamanuia.