SiC substrate 3inisi 350um le mafiafia HPSI ituaiga Prime Grade Dummy grade

Fa'amatalaga Pupuu:

O wafers e 3-inisi le High Purity Silicon Carbide (SiC) ua mamanuina faapitoa mo faʻaoga faigata i le eletise eletise, optoelectronics, ma suʻesuʻega faʻapitoa. E maua i le Production, Research, ma Dummy Grades, o nei wafers e tuʻuina atu ai le teteʻe tulaga ese, maualalo le mafiafia o mea sese, ma le tulaga lelei o le fogaeleele. Faatasi ai ma meatotino e leʻi faʻapipiʻiina, latou te tuʻuina atu le faʻavae sili ona lelei mo le gaosia o masini maualuga le faʻatinoga o loʻo faʻagaoioia i lalo o tulaga vevela ma eletise ogaoga.


Fa'aaliga

Meatotino

Fa'atulagaga

Vasega o le Gaosiga

Vasega o Suesuega

Vasega Fa'ata'ita'i

Iunite

Vasega Vasega o le Gaosiga Vasega o Suesuega Vasega Fa'ata'ita'i  
Lapoa 76.2 ± 0.5 76.2 ± 0.5 76.2 ± 0.5 mm
Mafiafia 500 ± 25 500 ± 25 500 ± 25 µm
Fa'asinomaga o le Wafer I luga o le 'au: <0001> ± 0.5° I luga o le 'au: <0001> ± 2.0° I luga o le 'au: <0001> ± 2.0° tikeri
Mafiafia o le Maikopipa (MPD) ≤ 1 ≤ 5 ≤ 10 cm−2^-2−2
Tete'e Fa'aeletise ≥ 1E10 ≥ 1E5 ≥ 1E5 Ω·cm
Dopant Ua le toe fa'aaogaina Ua le toe fa'aaogaina Ua le toe fa'aaogaina  
Fa'asinomaga Laulau Muamua {1-100} ± 5.0° {1-100} ± 5.0° {1-100} ± 5.0° tikeri
Umi Mafolafola Autū 32.5 ± 3.0 32.5 ± 3.0 32.5 ± 3.0 mm
Umi Mafolafola Lona Lua 18.0 ± 2.0 18.0 ± 2.0 18.0 ± 2.0 mm
Fa'asinomaga Mafolafola Lona Lua 90° CW mai le mafolafola autū ± 5.0° 90° CW mai le mafolafola autū ± 5.0° 90° CW mai le mafolafola autū ± 5.0° tikeri
Tuusaunoaga o le Pito 3 3 3 mm
LTV/TTV/Aufana/Vau 3 / 10 / ±30 / 40 3 / 10 / ±30 / 40 5 / 15 / ±40 / 45 µm
Ma'ale'ale o le fogā'ele'ele Si-fofoga: CMP, C-fofoga: Fa'apupula Si-fofoga: CMP, C-fofoga: Fa'apupula Si-fofoga: CMP, C-fofoga: Fa'apupula  
Māvaevae (Moli Malosi) Leai se tasi Leai se tasi Leai se tasi  
Papa Hex (Moli Malosi Maualuga) Leai se tasi Leai se tasi Eria fa'aputu 10% %
Vaega Polytype (Moli Malosi Maualuga) Eria fa'aputu 5% Eria fa'aputu 20% Eria fa'aputu 30% %
Maosi (Moli Malosi) ≤ 5 maosi, umi fa'aputu ≤ 150 ≤ 10 maosi, umi fa'aputu ≤ 200 ≤ 10 maosi, umi fa'aputu ≤ 200 mm
Fa'apala'au o le Pito Leai se mea ≥ 0.5 mm le lautele/loloto 2 fa'atagaina ≤ 1 mm lautele/loloto 5 fa'atagaina ≤ 5 mm lautele/loloto mm
Fa'aleagaina o le Luga Leai se tasi Leai se tasi Leai se tasi  

Talosaga

1. Mea Fa'aeletoronika Malosiaga Maualuga
O le maualuga o le conductivity thermal ma le lautele o le bandgap o SiC wafers e avea ai ma mea lelei mo masini eletise maualuga, maualuga le televave:
●MOSFET ma IGBT mo le liua o le eletise.
● Faiga fa'aeletise fa'aonaponei mo ta'avale eletise, e aofia ai inverters ma chargers.
●Fa'avae tau feso'ota'iga atamai ma faiga fa'afouina o le malosiaga.
2. Faiga RF ma Maikoloveve
E mafai e substrates SiC ona faʻaogaina le RF maualuga ma le microwave ma le itiiti ifo o le leiloa o faailoilo:
● Faiga feso'ota'iga ma satelite.
●Faiga o radar vaalele.
●Vaega feso'ota'iga 5G fa'aonaponei.
3. Optoelectronics ma Sensors
O meatotino tulaga ese o le SiC e lagolagoina ai le tele o faʻaoga optoelectronic:
●Mea e iloa ai UV mo le mata'ituina o le siosiomaga ma le iloa o alamanuia.
●Mea fa'apipi'i LED ma le laser mo moli mautu ma meafaigaluega sa'o.
●Sensoga e fa'avevela maualuga mo alamanuia o le ea ma ta'avale.
4. Suesuega ma Atina'e
O le eseese o vasega (Gaosiga, Suesuega, Mea Fa'ata'ita'i) e mafai ai ona faia fa'ata'ita'iga fa'aonaponei ma faia ai fa'ata'ita'iga o masini i totonu o a'oa'oga maualuluga ma pisinisi.

Fa'amanuiaga

●Fa'atuatuaina:Tete'e lelei ma le mautu i vaega eseese.
●Fa'apitoaina:Fa'atulagaga ma mafiafia fa'apitoa e fetaui ma mana'oga eseese.
●Mama Maualuga:O le tu'ufa'atasiga e le'i fa'afefiloi e fa'amautinoa ai le itiiti o suiga e feso'ota'i ma mea leaga.
●Fa'ateleina:Fa'ataunu'uina mana'oga o le gaosiga tele ma su'esu'ega fa'ata'ita'i.
O wafers SiC mama e 3-inisi o lau faitotoʻa lea i masini faʻatino maualuga ma faʻatekonolosi fou. Mo fesili ma faʻamatalaga auiliili, faʻafesoʻotaʻi matou i le aso.

Aotelega

O Wafers Silikon Carbide (SiC) e 3-inisi le maualuga, o loʻo maua i le gaosiga, suʻesuʻega, ma le Dummy Grades, o ni substrates sili ona lelei ua mamanuina mo eletise malolosi, RF/microwave systems, optoelectronics, ma R&D faʻapitoa. O nei wafers e iai uiga e leʻi faʻapipiʻiina, semi-insulating ma le resistivity sili ona lelei (≥1E10 Ω·cm mo le Production Grade), maualalo le mafiafia o micropipe (≤1 cm−2^-2−2), ma le tulaga lelei o le fogaeleele. Ua faʻaleleia mo faʻaoga maualuga le faʻatinoga, e aofia ai le liua o le eletise, fesoʻotaʻiga, UV sensing, ma tekinolosi LED. Faatasi ai ma faʻatulagaga e mafai ona fetuʻunaʻi, sili atu le conductivity o le vevela, ma meatotino faʻainisinia malolosi, o nei wafers SiC e mafai ai ona faia lelei ma faʻatuatuaina le gaosiga o masini ma faʻafouga fou i pisinisi eseese.

Ata Auiliili

SiC Semi-Insulating04
SiC Semi-Insulating05
SiC Semi-Insulating01
SiC Semi-Insulating06

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