4H-N HPSI SiC wafer 6H-N 6H-P 3C-N SiC Epitaxial wafer mo MOS po'o SBD
SiC Substrate SiC Epi-wafer Puupuu
Matou te ofoina atu se vaega atoa o tulaga maualuga SiC substrates ma sic wafers i le tele o polytypes ma doping profiles-e aofia ai le 4H-N (n-type conductive), 4H-P (p-type conductive), 4H-HPSI (high-purity semi-insulating), ma le 6H-P (p-type conductive) -i le lautele, ma le 8″ uma, ma le 6″ ala uma, ma le 6″. 12″. I tua atu o mea e leai ni mea'ai, o la matou auaunaga fa'atupuina o le epi wafer e fa'aopoopoina le tau e tu'uina atu ai u'amea epitaxial (epi) ma le mafiafia fa'atonutonu lelei (1-20 µm), fa'atosina o le doping, ma le tele o faaletonu.
O sic wafer ma epi wafer e faia su'esu'ega i totonu ole laiga (micropipe density <0.1 cm⁻², fa'asaa o luga Ra <0.2 nm) ma fa'amatalaga eletise atoa (CV, fa'afanua resistivity) ina ia mautinoa le tulaga tutusa tioata ma le fa'atinoga. Pe faʻaaogaina mo masini eletise eletise, faʻaulu RF maualuga, poʻo masini optoelectronic (LEDs, photodetectors), o tatou SiC substrate ma epi wafer laina oloa e maua ai le faʻamaoni, faʻamautu vevela, ma le malepelepe malosi e manaʻomia e talosaga sili ona faigata i aso nei.
SiC Substrate 4H-N ituaiga o meatotino ma le fa'aogaina
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4H-N SiC substrate Polytype (Hexagonal) Fa'atulagaga
O le vaeluaga lautele o le ~ 3.26 eV faʻamautinoa le faʻaogaina o le eletise ma le malosi o le vevela i lalo o le maualuga o le vevela ma le maualuga o le eletise-eletise.
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SiC mea'aiN-ituaiga Doping
O le fa'atonuina tonu o le nitrogen doping e maua mai ai le fa'aputuga mai le 1 × 10¹⁶ i le 1 × 10¹⁹ cm⁻³ ma le vevela o le potu e o'o atu i le ~900 cm²/V·s, fa'aitiitia le gau.
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SiC mea'aiTele Resistivity & tutusa
O lo'o maua le resistivity va'aiga o le 0.01-10 Ω·cm ma le mafiafia wafer o le 350-650 µm fa'atasi ai ma le ±5% fa'apalepale i le doping ma le mafiafia-lelei mo le gaosiga o masini maualuga.
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SiC mea'aiUltra-Maualalo Defect Density
Micropipe density <0.1 cm⁻² ma le basal-plane dislocation density <500 cm⁻², fa'aolaina > 99% le gaosiga o masini ma maualuga le fa'amaoni tioata.
- SiC mea'aiTulaga Fa'aavevela Fa'avela
O le faʻafefe o le vevela e oʻo atu i le ~ 370 W / m · K e faʻafaigofie ai le faʻamalo lelei o le vevela, faʻamalosia le faʻatuatuaina o le masini ma le malosi malosi.
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SiC mea'aiTalosaga Fa'atatau
SiC MOSFETs, Schottky diodes, eletise eletise ma masini RF mo ta'avale eletise, suiga ole la, ta'avale fale gaosimea, faiga fa'atosina, ma isi maketi mana'omia-eletise.
6inch 4H-N ituaiga SiC wafer faʻamatalaga | ||
| Meatotino | Zero MPD Vasega Gaosia (Visi Z) | Vasega Fa'ata (vaega D) |
| Vasega | Zero MPD Vasega Gaosia (Visi Z) | Vasega Fa'ata (vaega D) |
| Diamita | 149.5 mm - 150.0 mm | 149.5 mm - 150.0 mm |
| Poly-ituaiga | 4H | 4H |
| mafiafia | 350 µm ± 15 µm | 350 µm ± 25 µm |
| Fa'asinomaga ole Wafer | Tu'u ese: 4.0° agai i le <1120> ± 0.5° | Tu'u ese: 4.0° agai i le <1120> ± 0.5° |
| Micropipe Density | ≤ 0.2 cm² | ≤ 15 cm² |
| Tete'e | 0.015 - 0.024 Ω·cm | 0.015 - 0.028 Ω·cm |
| Primary Flat Orientation | [10-10] ± 50° | [10-10] ± 50° |
| Primary Flat Umi | 475 mm ± 2.0 mm | 475 mm ± 2.0 mm |
| Tuusaunoaga Tupito | 3 mm | 3 mm |
| LTV/TIV / Aufana / Warp | ≤ 2.5 µm / ≤ 6 µm / ≤ 25 µm / ≤ 35 µm | ≤ 5 µm / ≤ 15 µm / ≤ 40 µm / ≤ 60 µm |
| Talatala | Polani Ra ≤ 1 nm | Polani Ra ≤ 1 nm |
| CMP Ra | ≤ 0.2 nm | ≤ 0.5 nm |
| Ta'eta'e Tu'u I le Malamalama Maualuluga | Umi fa'aputu ≤ 20 mm umi tasi ≤ 2 mm | Umi fa'aputu ≤ 20 mm umi tasi ≤ 2 mm |
| Papatusi Hex I Malamalama Maualuga Maualuga | Vaega fa'aopoopo ≤ 0.05% | Vaega fa'aopoopo ≤ 0.1% |
| Polytype Areas I le Malamalama Maualuga | Vaega fa'aopoopo ≤ 0.05% | Vaega fa'aopoopo ≤ 3% |
| Vaaiga Carbon Inclusions | Vaega fa'aopoopo ≤ 0.05% | Vaega fa'aopoopo ≤ 5% |
| Susi Sili Sili I luga o le Malamalama Maualuga | Umi fa'aputu ≤ 1 le lautele o fafie | |
| Tipi Chips E Malamalama Malosi Maualuga | Leai se fa'atagaina ≥ 0.2 mm le lautele ma le loloto | 7 faatagaina, ≤ 1 mm taitasi |
| Fa'a'ese'ese le fa'a siu filo | <500 cm³ | <500 cm³ |
| Silicon Surface Contamination E le Malamalama Maualuga | ||
| afifiina | Tele-wafer kaseti po'o se atigi apa e tasi | Tele-wafer kaseti po'o se atigi apa e tasi |
8inch 4H-N ituaiga SiC wafer's faʻamatalaga | ||
| Meatotino | Zero MPD Vasega Gaosia (Visi Z) | Vasega Fa'ata (vaega D) |
| Vasega | Zero MPD Vasega Gaosia (Visi Z) | Vasega Fa'ata (vaega D) |
| Diamita | 199.5 mm - 200.0 mm | 199.5 mm - 200.0 mm |
| Poly-ituaiga | 4H | 4H |
| mafiafia | 500 µm ± 25 µm | 500 µm ± 25 µm |
| Fa'asinomaga ole Wafer | 4.0° agai i le <110> ± 0.5° | 4.0° agai i le <110> ± 0.5° |
| Micropipe Density | ≤ 0.2 cm² | ≤ 5 cm² |
| Tete'e | 0.015 - 0.025 Ω·cm | 0.015 - 0.028 Ω·cm |
| Fa'atonuga mamalu | ||
| Tuusaunoaga Tupito | 3 mm | 3 mm |
| LTV/TIV / Aufana / Warp | ≤ 5 µm / ≤ 15 µm / ≤ 35 µm / 70 µm | ≤ 5 µm / ≤ 15 µm / ≤ 35 µm / 100 µm |
| Talatala | Polani Ra ≤ 1 nm | Polani Ra ≤ 1 nm |
| CMP Ra | ≤ 0.2 nm | ≤ 0.5 nm |
| Ta'eta'e Tu'u I le Malamalama Maualuluga | Umi fa'aputu ≤ 20 mm umi tasi ≤ 2 mm | Umi fa'aputu ≤ 20 mm umi tasi ≤ 2 mm |
| Papatusi Hex I Malamalama Maualuga Maualuga | Vaega fa'aopoopo ≤ 0.05% | Vaega fa'aopoopo ≤ 0.1% |
| Polytype Areas I le Malamalama Maualuga | Vaega fa'aopoopo ≤ 0.05% | Vaega fa'aopoopo ≤ 3% |
| Vaaiga Carbon Inclusions | Vaega fa'aopoopo ≤ 0.05% | Vaega fa'aopoopo ≤ 5% |
| Susi Sili Sili I luga o le Malamalama Maualuga | Umi fa'aputu ≤ 1 le lautele o fafie | |
| Tipi Chips E Malamalama Malosi Maualuga | Leai se fa'atagaina ≥ 0.2 mm le lautele ma le loloto | 7 faatagaina, ≤ 1 mm taitasi |
| Fa'a'ese'ese le fa'a siu filo | <500 cm³ | <500 cm³ |
| Silicon Surface Contamination E le Malamalama Maualuga | ||
| afifiina | Tele-wafer kaseti po'o se atigi apa e tasi | Tele-wafer kaseti po'o se atigi apa e tasi |
4H-SiC o se mea maualuga faʻatinoga faʻaaogaina mo eletise eletise, masini RF, ma faʻaoga maualuga-vevela. O le "4H" e faasino i le fausaga tioata, o le hexagonal, ma le "N" o loʻo faʻaalia ai se ituaiga doping e faʻaaogaina e faʻaleleia ai le faʻatinoga o mea.
O le4H-SiCituaiga e masani ona faʻaaogaina mo:
Malosiaga Fa'aeletonika:Fa'aoga i masini e pei o diodes, MOSFETs, ma IGBTs mo ta'avale eletise eletise, masini fale gaosi oloa, ma faiga fa'afouina.
5G Tekinolosi:Fa'atasi ai ma le mana'oga a le 5G mo vaega maualuga-telefoni ma maualuga-lelei, o le malosi o le SiC e fa'atautaia ai volita maualuga ma fa'agaoioi i le vevela maualuga e fa'amalieina ai mo fa'amalo eletise ma masini RF.
Faiga ole Malosiaga ole la:O mea lelei tele a le SiC e fa'aogaina ai le eletise e lelei mo photovoltaic (solar power) inverters ma converters.
Ta'avale eletise (EVs):O le SiC e faʻaaogaina lautele i EV powertrains mo le sili atu le lelei o le liua o le malosi, faʻaitiitia le vevela, ma le maualuga o le malosi.
SiC Substrate 4H Semi-Insulating ituaiga meatotino ma le fa'aogaina
Meatotino:
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Fa'ata'ita'iga e pulea le mamafa e leai ni paipa: Faʻamautinoa le leai o ni micropipes, faʻaleleia le lelei o le substrate.
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Monocrystalline fa'atonutonu auala: Faʻamaonia se fausaga tioata e tasi mo mea faʻaleleia atili.
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Auala e pulea ai fa'aaofia: Faʻaitiʻitia le i ai o mea le mama poʻo mea faʻapipiʻi, faʻamautinoaina se mea mama mama.
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Fa'atonuga fa'atonutonu: Fa'ataga mo le fa'atonu sa'o o le fa'afitia o le eletise, lea e taua tele mo le fa'atinoga o masini.
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Fa'atonuga le mama ma faiga fa'atonutonu: Faʻatonutonu ma faʻatapulaʻaina le faʻaofiina o mea le mama e faʻamautu ai le faʻamaoni o meaʻai.
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Fa'ata'ita'iga fa'atonutonu lautele laasaga: E maua ai le fa'atonuga sa'o i luga ole la'a lautele, fa'amautinoaina le tutusa i luga ole mea'ai
6Inisi 4H-semi SiC mea fa'apitoa | ||
| Meatotino | Zero MPD Vasega Gaosia (Visi Z) | Vasega Fa'ata (vaega D) |
| Diamita (mm) | 145 mm - 150 mm | 145 mm - 150 mm |
| Poly-ituaiga | 4H | 4H |
| Mafiafia (um) | 500 ± 15 | 500 ± 25 |
| Fa'asinomaga ole Wafer | I luga ole axis: ± 0.0001° | I luga ole axis: ±0.05° |
| Micropipe Density | ≤ 15 cm-2 | ≤ 15 cm-2 |
| Tete'e (Ωcm) | ≥ 10E3 | ≥ 10E3 |
| Primary Flat Orientation | (0-10)° ± 5.0° | (10-10)° ± 5.0° |
| Primary Flat Umi | Notch | Notch |
| Tuusaunoaga pito (mm) | ≤ 2.5 µm / ≤ 15 µm | ≤ 5.5 µm / ≤ 35 µm |
| LTV / tanoa / Warp | ≤ 3 µm | ≤ 3 µm |
| Talatala | Polani Ra ≤ 1.5 µm | Polani Ra ≤ 1.5 µm |
| Tipi Chips E Malamalama Malosi Maualuga | ≤ 20 µm | ≤ 60 µm |
| Papatusi vevela e ala i le malamalama maualuga | Fa'aopoopo ≤ 0.05% | Fa'aopoopo ≤ 3% |
| Polytype Areas I le Malamalama Maualuga | Va'aiga Carbon Inclusions ≤ 0.05% | Fa'aopoopo ≤ 3% |
| Susi Sili Sili I luga o le Malamalama Maualuga | ≤ 0.05% | Fa'aopoopo ≤ 4% |
| Tipi Chips I le Mamalu Mamalu Tele (Lapopoa) | Le Fa'ataga > 02 mm Lautele ma Lele | Le Fa'ataga > 02 mm Lautele ma Lele |
| O le Fa'aliga o le Screw Fesoasoani | ≤ 500 µm | ≤ 500 µm |
| Silicon Surface Contamination E le Malamalama Maualuga | ≤ 1 x 10^5 | ≤ 1 x 10^5 |
| afifiina | Tele-wafer kaseti po'o se atigipusa ta'i tasi | Tele-wafer kaseti po'o se atigipusa ta'i tasi |
4-Inisi 4H-Semi Insulating SiC Substrate Fa'amatalaga
| Parameter | Zero MPD Vasega Gaosia (Visi Z) | Vasega Fa'ata (vaega D) |
|---|---|---|
| Meatotino Faaletino | ||
| Diamita | 99.5 mm – 100.0 mm | 99.5 mm – 100.0 mm |
| Poly-ituaiga | 4H | 4H |
| mafiafia | 500 μm ± 15 μm | 500 μm ± 25 μm |
| Fa'asinomaga ole Wafer | I luga ole axis: <600h> 0.5° | I luga ole axis: <000h> 0.5° |
| Eletise Meatotino | ||
| Malosi'i paipa (MPD) | ≤1 cm⁻² | ≤15 cm⁻² |
| Tete'e | ≥150 Ω·cm | ≥1.5 Ω·cm |
| Fa'apalepale Geometric | ||
| Primary Flat Orientation | (0x10) ± 5.0° | (0x10) ± 5.0° |
| Primary Flat Umi | 52.5 mm ± 2.0 mm | 52.5 mm ± 2.0 mm |
| Lua Mafolafola Umi | 18.0 mm ± 2.0 mm | 18.0 mm ± 2.0 mm |
| Tulaga Lua mafolafola | 90° CW mai Prime flat ± 5.0° (Si fa'asaga i luga) | 90° CW mai Prime flat ± 5.0° (Si fa'asaga i luga) |
| Tuusaunoaga Tupito | 3 mm | 3 mm |
| LTV / TTV / Aufana / Warp | ≤2.5 μm / ≤5 μm / ≤15 μm / ≤30 μm | ≤10 μm / ≤15 μm / ≤25 μm / ≤40 μm |
| Tulaga lelei | ||
| Fa'asaa ole Lau'ele'ele (Polani Ra) | ≤1 nm | ≤1 nm |
| Fa'asaa ole Lau'ele'ele (CMP Ra) | ≤0.2 nm | ≤0.2 nm |
| Ta'e Tu'u (Malu Malosi) | E le faatagaina | Umi fa'aputu ≥10 mm, ta'e tasi ≤2 mm |
| Fa'aletonu Papatu Hexagonal | ≤0.05% vaega fa'aopoopo | ≤0.1% vaega fa'aopoopo |
| Polytype Fa'aofi Vaega | E le faatagaina | ≤1% vaega fa'aopoopo |
| Vaaiga Carbon Inclusions | ≤0.05% vaega fa'aopoopo | ≤1% vaega fa'aopoopo |
| Mata'i Sili Sili | E le faatagaina | ≤1 umi fa'aputuga fa'aputuga o le lautele |
| Tipi Chips | Leai se fa'atagaina (≥0.2 mm lautele/loloto) | ≤5 meataalo (tasi ≤1 mm) |
| Silicon Laufanua Fa'aleaga | E le o ta'ua | E le o ta'ua |
| afifiina | ||
| afifiina | Kaseti tele-wafer po'o se atigipusa tasi-wafer | Tele-wafer kaseti po o |
Talosaga:
O leSiC 4H Semi-Insulating substrateso loʻo faʻaaogaina muamua i masini eletise eletise maualuga ma maualuga, aemaise lava i leRF fanua. O nei substrates e taua tele mo faʻaoga eseese e aofia aifaiga fa'afeso'ota'i microwave, fa'asologa fa'asolosolo radar, mamasini eletise uaealesi. O le maualuga o le vevela ma le sili ona lelei o le eletise e mafai ai ona lelei mo le manaʻomia o talosaga i le eletise eletise ma fesoʻotaʻiga.
SiC epi wafer 4H-N ituaiga o meatotino ma le faʻaogaina
SiC 4H-N Type Epi Wafer Meatotino ma Talosaga
Meatotino o SiC 4H-N Type Epi Wafer:
Meafaitino:
SiC (Silicon Carbide): E lauiloa mo lona maaa mataʻina, maualuga le vevela, ma mea lelei eletise, SiC e lelei mo masini eletise maualuga.
4H-SiC Polytype: O le 4H-SiC polytype ua lauiloa mo lona maualuga maualuga ma le mautu i mea faʻaeletoroni.
N-ituaiga Doping: N-type doping (doped with nitrogen) e maua ai le fa'aogaina lelei o le eletise, ma fa'atatau ai le SiC mo fa'aoga maualuga ma le malosi.
Amioga vevela maualuga:
SiC wafers e sili atu le fa'auluina o le vevela, e masani lava mai120–200 W/m·K, e mafai ai ona latou pulea lelei le vevela i masini maualuga e pei o transistors ma diodes.
Avanoa Lautele:
Faatasi ai ma se fusi o3.26 eV, 4H-SiC e mafai ona faʻaogaina i luga o voltage maualuga, alalaupapa, ma le vevela faʻatusatusa i masini faʻapipiʻi masani, faʻaogaina lelei mo le maualuga, faʻaoga maualuga.
Meatotino tau Eletise:
O le maualuga o le eletise eletise a le SiC ma le faʻaogaina e faʻalelei aieletise eletise, e ofoina atu le saoasaoa o suiga vave ma le maualuga o le taimi nei ma le malosi e faʻaogaina ai le eletise, e mafua ai le sili atu ona lelei le puleaina o le eletise.
Tete'e Fa'ainisinia ma Vailaau:
O le SiC o se tasi o mea sili ona faigata, lona lua i taimane, ma e matua tetee atu i le faʻamaʻiina ma le pala, ma faʻamalosia ai i siosiomaga faigata.
Fa'aoga ole SiC 4H-N Type Epi Wafer:
Malosiaga Fa'aeletonika:
SiC 4H-N ituaiga epi wafers o loʻo faʻaaogaina lautele imalosi MOSFETs, IGBTs, madiodesmoliua manai faiga e pei ola inverters, taavale eletise, mafaiga e teu ai le malosi, ofoina atu le faʻaleleia atili o le faʻatinoga ma le malosi o le malosi.
Ta'avale eletise (EVs):
In ta'avale eletise eletise, ta'avale afi, manofoaga e molia ai, SiC wafers fesoasoani e maua ai le sili atu le lelei o le maa, faʻapipiʻiina vave, ma faʻaleleia atili le faʻatinoga o le malosi ona o lo latou gafatia e taulimaina le malosi maualuga ma le vevela.
Malosiaga Fa'afouina:
Su'ega o le la: SiC wafers o loʻo faʻaaogaina ifaiga fa'aolamo le fa'aliliuina o le mana DC mai le la i le AC, fa'atuputeleina le lelei atoatoa o le faiga ma le fa'atinoga.
Savili Turbines: SiC tekonolosi o loʻo faʻaaogaina ifaiga e pulea ai le savili, fa'amalieina le gaosiga o le mana ma le fa'aliliuga lelei.
Aerospace ma Puipuiga:
SiC wafers e lelei mo le faʻaaogaina iaerospace faaeletonikamatalosaga faamiliteli, e aofia aifaiga radarmasatelite faaeletonika, lea e taua tele ai le fa'asaoina o fa'avevela ma le mautu o le vevela.
Talosaga Maualuluga ma Talosaga Talosaga:
SiC wafers e sili ona leleimea tau eletise maualuga, fa'aaogaina iafi vaalele, va'alele, mafaiga faamafanafana falegaosimea, a'o latou fa'atumauina le fa'atinoga i tulaga vevela tele. E le gata i lea, o lo latou vaeluaga lautele e mafai ai ona faʻaoga i totonufa'aoga maualugapeiRF masinimafeso'ota'iga microwave.
| 6-inisi N-ituaiga epit axial faʻamatalaga | |||
| Parameter | iunite | Z-MOS | |
| Ituaiga | Amioga / Dopant | - | N-ituaiga / Nitrogen |
| Laega Fa'amau | Fa'asa'o Fa'alava Mafiafia | um | 1 |
| Fa'apalepale Layer Mafiafia | % | ±20% | |
| Fa'asa'o Fa'apa'u | cm-3 | 1.00E+18 | |
| Fa'apalepale Fa'apalepale Layer Concentrate | % | ±20% | |
| 1st Epi Layer | Epi Layer Mafiafia | um | 11.5 |
| Epi Layer Mafiafia tutusa | % | ±4% | |
| Epi Layers Mafiafia Fa'apalepale((Fa'amatalaga- Max, Min)/Fa'amatalaga) | % | ±5% | |
| Epi Layer Concentration | cm-3 | 1E 15~ 1E 18 | |
| Epi Layer Concentrate Onosa'i | % | 6% | |
| Epi Layer Concentrate tutusa (σ /uiga) | % | ≤5% | |
| Epi Layer Concentrate Uniformity <(max-min)/(max+min> | % | ≤ 10% | |
| Epitaixal Wafer Shape | punou | um | ≤±20 |
| WARP | um | ≤30 | |
| TTV | um | ≤ 10 | |
| LTV | um | ≤2 | |
| Uiga Lautele | Malosi umi | mm | ≤30mm |
| Tipi Chips | - | E LEAI | |
| Fa'ailoga fa'aletonu | ≥97% (fuaina ile 2*2， Fa'aleagaina fa'aletonu e aofia ai: Fa'aletonu e aofia ai Micropipe / lua tetele, Karoti, Tafatolu | ||
| Fa'aleagaina uamea | atoms/cm² | d f f ll i ≤5E10 atoms/cm2 (Al, Cr, Fe, Ni, Cu, Zn, Hg,Na,K,Ti, Ca &Mn) | |
| afifi | Fa'amatalaga fa'apipi'i | pcs / pusa | kaseti tele-wafer po'o se apa fa'apipi'i tasi |
| 8-inisi N-ituaiga epitaxial faʻamatalaga | |||
| Parameter | iunite | Z-MOS | |
| Ituaiga | Amioga / Dopant | - | N-ituaiga / Nitrogen |
| Papa puipui | Fa'asa'o Fa'alava Mafiafia | um | 1 |
| Fa'apalepale Layer Mafiafia | % | ±20% | |
| Fa'asa'o Fa'apa'u | cm-3 | 1.00E+18 | |
| Fa'apalepale Fa'apalepale Layer Concentrate | % | ±20% | |
| 1st Epi Layer | Epi Layers Mafiafia averesi | um | 8~ 12 |
| Epi Layers Mafiafia tutusa (σ/mean) | % | ≤2.0 | |
| Fa'apalepale Mafiafia Lays Epi((Fa'amatalaga -Max, Min)/Fa'amatalaga) | % | ±6 | |
| Epi Layers Net Avemera Doping | cm-3 | 8E+15 ~2E+16 | |
| Epi Layers Net Doping Uniformity (σ/mean) | % | ≤5 | |
| Epi Layers Net DopingTolerance((Spec -Max， | % | ± 10.0 | |
| Epitaixal Wafer Shape | Mi )/S ) A'ai | um | ≤50.0 |
| punou | um | ± 30.0 | |
| TTV | um | ≤ 10.0 | |
| LTV | um | ≤4.0 (10mm×10mm) | |
| lautele Uiga | Masisi | - | Fa'aputuga umi≤ 1/2Wafer diameter |
| Tipi Chips | - | ≤2 tupe meataalo, radius taʻitasi≤1.5mm | |
| Fa'aleaga uamea i luga | atoms/cm2 | ≤5E10 atoms/cm2 (Al, Cr, Fe, Ni, Cu, Zn, Hg,Na,K,Ti, Ca &Mn) | |
| Su'ega Fa'aletonu | % | ≥ 96.0 (2X2 faaletonu e aofia ai Micropipe / lua tetele, Karoti, fa'aletonu tafatolu, Pa'u, Linear/IGSF-s, BPD) | |
| Fa'aleaga uamea i luga | atoms/cm2 | ≤5E10 atoms/cm2 (Al, Cr, Fe, Ni, Cu, Zn, Hg,Na,K,Ti, Ca &Mn) | |
| afifi | Fa'amatalaga fa'apipi'i | - | kaseti tele-wafer po'o se apa fa'apipi'i tasi |
SiC wafer's Q&A
Q1: O a ni fa'amanuiaga autu o le fa'aogaina o siC wafers i luga o fa'asolo fa'asolo masani i le eletise eletise?
A1:
SiC wafers e ofoina atu le tele o mea sili ona lelei nai lo le silicon masani (Si) wafers i le eletise eletise, e aofia ai:
Maualuga Maualuga: O le SiC e sili atu lona va'a (3.26 eV) pe a fa'atusatusa i le silicon (1.1 eV), e fa'atagaina ai masini e fa'agaoioi i voluma maualuga, alalaupapa, ma le vevela. O lenei mea e oʻo atu ai i le faʻaitiitia o le paʻu o le eletise ma sili atu le lelei i faiga faʻaliliuina eletise.
Amioga vevela maualuga: SiC's thermal conductivity e sili atu le maualuga nai lo le silicon, e mafai ai ona sili atu le faʻafefe o le vevela i faʻaoga maualuga-malosi, lea e faʻaleleia ai le faʻatuatuaina ma le ola o masini eletise.
Malosi maualuga ma le taimi nei taulima: O masini SiC e mafai ona faʻatautaia le maualuga o le voltage ma le tulaga o loʻo i ai nei, e faʻaogaina ai mo faʻaoga maualuga-malosi pei o taʻavale eletise, faʻafouina malosiaga faʻafouina, ma taʻavale afi.
Saosaoa Suiga Saosaoa: O masini SiC o loʻo i ai le vave faʻafesoʻotaʻi gafatia, lea e saofagā i le faʻaitiitia o le malosi o le gau ma le tele o le tino, ma faʻaogaina lelei mo faʻaoga maualuga.
Q2: O a faʻaoga autu a SiC wafers i totonu o pisinisi taʻavale?
A2:
I totonu o fale taʻavale, SiC wafers e faʻaaogaina muamua i:
Ta'avale eletise (EV) Powertrains: vaega fa'avae SiC peifa'afoligamamalosi MOSFETsfa'aleleia atili le lelei ma le fa'atinoina o ta'avale eletise e ala i le fa'agaoioia o suiga vave ma le maualuga o le malosi. E mafua ai le umi o le ola o le maa ma sili atu le lelei o le faatinoga o taavale.
Totogi i luga ole Laupapa: O masini SiC e fesoasoani e faʻaleleia le faʻaogaina o faiga faʻapipiʻi i luga o le laupapa e ala i le faʻavaveina o taimi faʻapipiʻi ma sili atu le puleaina o le vevela, lea e taua tele mo EVs e lagolago ai le maualuga o le eletise.
Faiga Fa'afoega o Ma'a (BMS): SiC tekinolosi faʻaleleia le lelei ofaiga pulea maa, e mafai ai ona sili atu tulafono faatonutonu voltage, sili atu le puleaina o le eletise, ma umi atu le ola o le maa.
Fa'aliliuga DC-DC: SiC wafers o loʻo faʻaaogaina iDC-DC liliue faaliliu ai le mana DC maualuga-voltage i le maualalo-voltage DC malosi sili atu ona lelei, lea e taua tele i taavale eletise e pulea ai le malosi mai le maa i vaega eseese o le taavale.
O le maualuga o le faatinoga a le SiC i le maualuga-voltage, maualuga-vevela, ma le maualuga o le faʻaogaina o talosaga e taua tele mo le faʻaogaina o pisinisi i le eletise.
6inch 4H-N ituaiga SiC wafer faʻamatalaga | ||
| Meatotino | Zero MPD Vasega Gaosia (Visi Z) | Vasega Fa'ata (vaega D) |
| Vasega | Zero MPD Vasega Gaosia (Visi Z) | Vasega Fa'ata (vaega D) |
| Diamita | 149.5 mm – 150.0 mm | 149.5 mm – 150.0 mm |
| Poly-ituaiga | 4H | 4H |
| mafiafia | 350 µm ± 15 µm | 350 µm ± 25 µm |
| Fa'asinomaga ole Wafer | Tu'u ese: 4.0° agai i le <1120> ± 0.5° | Tu'u ese: 4.0° agai i le <1120> ± 0.5° |
| Micropipe Density | ≤ 0.2 cm² | ≤ 15 cm² |
| Tete'e | 0.015 – 0.024 Ω·cm | 0.015 – 0.028 Ω·cm |
| Primary Flat Orientation | [10-10] ± 50° | [10-10] ± 50° |
| Primary Flat Umi | 475 mm ± 2.0 mm | 475 mm ± 2.0 mm |
| Tuusaunoaga Tupito | 3 mm | 3 mm |
| LTV/TIV / Aufana / Warp | ≤ 2.5 µm / ≤ 6 µm / ≤ 25 µm / ≤ 35 µm | ≤ 5 µm / ≤ 15 µm / ≤ 40 µm / ≤ 60 µm |
| Talatala | Polani Ra ≤ 1 nm | Polani Ra ≤ 1 nm |
| CMP Ra | ≤ 0.2 nm | ≤ 0.5 nm |
| Ta'eta'e Tu'u I le Malamalama Maualuluga | Umi fa'aputu ≤ 20 mm umi tasi ≤ 2 mm | Umi fa'aputu ≤ 20 mm umi tasi ≤ 2 mm |
| Papatusi Hex I Malamalama Maualuga Maualuga | Vaega fa'aopoopo ≤ 0.05% | Vaega fa'aopoopo ≤ 0.1% |
| Polytype Areas I le Malamalama Maualuga | Vaega fa'aopoopo ≤ 0.05% | Vaega fa'aopoopo ≤ 3% |
| Vaaiga Carbon Inclusions | Vaega fa'aopoopo ≤ 0.05% | Vaega fa'aopoopo ≤ 5% |
| Susi Sili Sili I luga o le Malamalama Maualuga | Umi fa'aputu ≤ 1 le lautele o fafie | |
| Tipi Chips E Malamalama Malosi Maualuga | Leai se fa'atagaina ≥ 0.2 mm le lautele ma le loloto | 7 faatagaina, ≤ 1 mm taitasi |
| Fa'a'ese'ese le fa'a siu filo | <500 cm³ | <500 cm³ |
| Silicon Surface Contamination E le Malamalama Maualuga | ||
| afifiina | Tele-wafer kaseti po'o se atigi apa e tasi | Tele-wafer kaseti po'o se atigi apa e tasi |
8inch 4H-N ituaiga SiC wafer's faʻamatalaga | ||
| Meatotino | Zero MPD Vasega Gaosia (Visi Z) | Vasega Fa'ata (vaega D) |
| Vasega | Zero MPD Vasega Gaosia (Visi Z) | Vasega Fa'ata (vaega D) |
| Diamita | 199.5 mm – 200.0 mm | 199.5 mm – 200.0 mm |
| Poly-ituaiga | 4H | 4H |
| mafiafia | 500 µm ± 25 µm | 500 µm ± 25 µm |
| Fa'asinomaga ole Wafer | 4.0° agai i le <110> ± 0.5° | 4.0° agai i le <110> ± 0.5° |
| Micropipe Density | ≤ 0.2 cm² | ≤ 5 cm² |
| Tete'e | 0.015 – 0.025 Ω·cm | 0.015 – 0.028 Ω·cm |
| Fa'atonuga mamalu | ||
| Tuusaunoaga Tupito | 3 mm | 3 mm |
| LTV/TIV / Aufana / Warp | ≤ 5 µm / ≤ 15 µm / ≤ 35 µm / 70 µm | ≤ 5 µm / ≤ 15 µm / ≤ 35 µm / 100 µm |
| Talatala | Polani Ra ≤ 1 nm | Polani Ra ≤ 1 nm |
| CMP Ra | ≤ 0.2 nm | ≤ 0.5 nm |
| Ta'eta'e Tu'u I le Malamalama Maualuluga | Umi fa'aputu ≤ 20 mm umi tasi ≤ 2 mm | Umi fa'aputu ≤ 20 mm umi tasi ≤ 2 mm |
| Papatusi Hex I Malamalama Maualuga Maualuga | Vaega fa'aopoopo ≤ 0.05% | Vaega fa'aopoopo ≤ 0.1% |
| Polytype Areas I le Malamalama Maualuga | Vaega fa'aopoopo ≤ 0.05% | Vaega fa'aopoopo ≤ 3% |
| Vaaiga Carbon Inclusions | Vaega fa'aopoopo ≤ 0.05% | Vaega fa'aopoopo ≤ 5% |
| Susi Sili Sili I luga o le Malamalama Maualuga | Umi fa'aputu ≤ 1 le lautele o fafie | |
| Tipi Chips E Malamalama Malosi Maualuga | Leai se fa'atagaina ≥ 0.2 mm le lautele ma le loloto | 7 faatagaina, ≤ 1 mm taitasi |
| Fa'a'ese'ese le fa'a siu filo | <500 cm³ | <500 cm³ |
| Silicon Surface Contamination E le Malamalama Maualuga | ||
| afifiina | Tele-wafer kaseti po'o se atigi apa e tasi | Tele-wafer kaseti po'o se atigi apa e tasi |
6Inisi 4H-semi SiC mea fa'apitoa | ||
| Meatotino | Zero MPD Vasega Gaosia (Visi Z) | Vasega Fa'ata (vaega D) |
| Diamita (mm) | 145 mm – 150 mm | 145 mm – 150 mm |
| Poly-ituaiga | 4H | 4H |
| Mafiafia (um) | 500 ± 15 | 500 ± 25 |
| Fa'asinomaga ole Wafer | I luga ole axis: ± 0.0001° | I luga ole axis: ±0.05° |
| Micropipe Density | ≤ 15 cm-2 | ≤ 15 cm-2 |
| Tete'e (Ωcm) | ≥ 10E3 | ≥ 10E3 |
| Primary Flat Orientation | (0-10)° ± 5.0° | (10-10)° ± 5.0° |
| Primary Flat Umi | Notch | Notch |
| Tuusaunoaga pito (mm) | ≤ 2.5 µm / ≤ 15 µm | ≤ 5.5 µm / ≤ 35 µm |
| LTV / tanoa / Warp | ≤ 3 µm | ≤ 3 µm |
| Talatala | Polani Ra ≤ 1.5 µm | Polani Ra ≤ 1.5 µm |
| Tipi Chips E Malamalama Malosi Maualuga | ≤ 20 µm | ≤ 60 µm |
| Papatusi vevela e ala i le malamalama maualuga | Fa'aopoopo ≤ 0.05% | Fa'aopoopo ≤ 3% |
| Polytype Areas I le Malamalama Maualuga | Va'aiga Carbon Inclusions ≤ 0.05% | Fa'aopoopo ≤ 3% |
| Susi Sili Sili I luga o le Malamalama Maualuga | ≤ 0.05% | Fa'aopoopo ≤ 4% |
| Tipi Chips I le Mamalu Mamalu Tele (Lapopoa) | Le Fa'ataga > 02 mm Lautele ma Lele | Le Fa'ataga > 02 mm Lautele ma Lele |
| O le Fa'aliga o le Screw Fesoasoani | ≤ 500 µm | ≤ 500 µm |
| Silicon Surface Contamination E le Malamalama Maualuga | ≤ 1 x 10^5 | ≤ 1 x 10^5 |
| afifiina | Tele-wafer kaseti po'o se atigipusa ta'i tasi | Tele-wafer kaseti po'o se atigipusa ta'i tasi |
4-Inisi 4H-Semi Insulating SiC Substrate Fa'amatalaga
| Parameter | Zero MPD Vasega Gaosia (Visi Z) | Vasega Fa'ata (vaega D) |
|---|---|---|
| Meatotino Faaletino | ||
| Diamita | 99.5 mm – 100.0 mm | 99.5 mm – 100.0 mm |
| Poly-ituaiga | 4H | 4H |
| mafiafia | 500 μm ± 15 μm | 500 μm ± 25 μm |
| Fa'asinomaga ole Wafer | I luga ole axis: <600h> 0.5° | I luga ole axis: <000h> 0.5° |
| Eletise Meatotino | ||
| Malosi'i paipa (MPD) | ≤1 cm⁻² | ≤15 cm⁻² |
| Tete'e | ≥150 Ω·cm | ≥1.5 Ω·cm |
| Fa'apalepale Geometric | ||
| Primary Flat Orientation | (0×10) ± 5.0° | (0×10) ± 5.0° |
| Primary Flat Umi | 52.5 mm ± 2.0 mm | 52.5 mm ± 2.0 mm |
| Lua Mafolafola Umi | 18.0 mm ± 2.0 mm | 18.0 mm ± 2.0 mm |
| Tulaga Lua mafolafola | 90° CW mai Prime flat ± 5.0° (Si fa'asaga i luga) | 90° CW mai Prime flat ± 5.0° (Si fa'asaga i luga) |
| Tuusaunoaga Tupito | 3 mm | 3 mm |
| LTV / TTV / Aufana / Warp | ≤2.5 μm / ≤5 μm / ≤15 μm / ≤30 μm | ≤10 μm / ≤15 μm / ≤25 μm / ≤40 μm |
| Tulaga lelei | ||
| Fa'asaa ole Lau'ele'ele (Polani Ra) | ≤1 nm | ≤1 nm |
| Fa'asaa ole Lau'ele'ele (CMP Ra) | ≤0.2 nm | ≤0.2 nm |
| Ta'e Tu'u (Malu Malosi) | E le faatagaina | Umi fa'aputu ≥10 mm, ta'e tasi ≤2 mm |
| Fa'aletonu Papatu Hexagonal | ≤0.05% vaega fa'aopoopo | ≤0.1% vaega fa'aopoopo |
| Polytype Fa'aofi Vaega | E le faatagaina | ≤1% vaega fa'aopoopo |
| Vaaiga Carbon Inclusions | ≤0.05% vaega fa'aopoopo | ≤1% vaega fa'aopoopo |
| Mata'i Sili Sili | E le faatagaina | ≤1 umi fa'aputuga fa'aputuga o le lautele |
| Tipi Chips | Leai se fa'atagaina (≥0.2 mm lautele/loloto) | ≤5 meataalo (tasi ≤1 mm) |
| Silicon Laufanua Fa'aleaga | E le o ta'ua | E le o ta'ua |
| afifiina | ||
| afifiina | Kaseti tele-wafer po'o se atigipusa tasi-wafer | Tele-wafer kaseti po o |
| 6-inisi N-ituaiga epit axial faʻamatalaga | |||
| Parameter | iunite | Z-MOS | |
| Ituaiga | Amioga / Dopant | - | N-ituaiga / Nitrogen |
| Laega Fa'amau | Fa'asa'o Fa'alava Mafiafia | um | 1 |
| Fa'apalepale Layer Mafiafia | % | ±20% | |
| Fa'asa'o Fa'apa'u | cm-3 | 1.00E+18 | |
| Fa'apalepale Fa'apalepale Layer Concentrate | % | ±20% | |
| 1st Epi Layer | Epi Layer Mafiafia | um | 11.5 |
| Epi Layer Mafiafia tutusa | % | ±4% | |
| Epi Layers Mafiafia Fa'apalepale((Fa'amatalaga- Max, Min)/Fa'amatalaga) | % | ±5% | |
| Epi Layer Concentration | cm-3 | 1E 15~ 1E 18 | |
| Epi Layer Concentrate Onosa'i | % | 6% | |
| Epi Layer Concentrate tutusa (σ /uiga) | % | ≤5% | |
| Epi Layer Concentrate Uniformity <(max-min)/(max+min> | % | ≤ 10% | |
| Epitaixal Wafer Shape | punou | um | ≤±20 |
| WARP | um | ≤30 | |
| TTV | um | ≤ 10 | |
| LTV | um | ≤2 | |
| Uiga Lautele | Malosi umi | mm | ≤30mm |
| Tipi Chips | - | E LEAI | |
| Fa'ailoga fa'aletonu | ≥97% (fuaina ile 2*2， Fa'aleagaina fa'aletonu e aofia ai: Fa'aletonu e aofia ai Micropipe / lua tetele, Karoti, Tafatolu | ||
| Fa'aleagaina uamea | atoms/cm² | d f f ll i ≤5E10 atoms/cm2 (Al, Cr, Fe, Ni, Cu, Zn, Hg,Na,K,Ti, Ca &Mn) | |
| afifi | Fa'amatalaga fa'apipi'i | pcs / pusa | kaseti tele-wafer po'o se apa fa'apipi'i tasi |
| 8-inisi N-ituaiga epitaxial faʻamatalaga | |||
| Parameter | iunite | Z-MOS | |
| Ituaiga | Amioga / Dopant | - | N-ituaiga / Nitrogen |
| Papa puipui | Fa'asa'o Fa'alava Mafiafia | um | 1 |
| Fa'apalepale Layer Mafiafia | % | ±20% | |
| Fa'asa'o Fa'apa'u | cm-3 | 1.00E+18 | |
| Fa'apalepale Fa'apalepale Layer Concentrate | % | ±20% | |
| 1st Epi Layer | Epi Layers Mafiafia averesi | um | 8~ 12 |
| Epi Layers Mafiafia tutusa (σ/mean) | % | ≤2.0 | |
| Fa'apalepale Mafiafia Lays Epi((Fa'amatalaga -Max, Min)/Fa'amatalaga) | % | ±6 | |
| Epi Layers Net Avemera Doping | cm-3 | 8E+15 ~2E+16 | |
| Epi Layers Net Doping Uniformity (σ/mean) | % | ≤5 | |
| Epi Layers Net DopingTolerance((Spec -Max， | % | ± 10.0 | |
| Epitaixal Wafer Shape | Mi )/S ) A'ai | um | ≤50.0 |
| punou | um | ± 30.0 | |
| TTV | um | ≤ 10.0 | |
| LTV | um | ≤4.0 (10mm×10mm) | |
| lautele Uiga | Masisi | - | Fa'aputuga umi≤ 1/2Wafer diameter |
| Tipi Chips | - | ≤2 tupe meataalo, radius taʻitasi≤1.5mm | |
| Fa'aleaga uamea i luga | atoms/cm2 | ≤5E10 atoms/cm2 (Al, Cr, Fe, Ni, Cu, Zn, Hg,Na,K,Ti, Ca &Mn) | |
| Su'ega Fa'aletonu | % | ≥ 96.0 (2X2 faaletonu e aofia ai Micropipe / lua tetele, Karoti, fa'aletonu tafatolu, Pa'u, Linear/IGSF-s, BPD) | |
| Fa'aleaga uamea i luga | atoms/cm2 | ≤5E10 atoms/cm2 (Al, Cr, Fe, Ni, Cu, Zn, Hg,Na,K,Ti, Ca &Mn) | |
| afifi | Fa'amatalaga fa'apipi'i | - | kaseti tele-wafer po'o se apa fa'apipi'i tasi |
Q1: O a ni fa'amanuiaga autu o le fa'aogaina o siC wafers i luga o fa'asolo fa'asolo masani i le eletise eletise?
A1:
SiC wafers e ofoina atu le tele o mea sili ona lelei nai lo le silicon masani (Si) wafers i le eletise eletise, e aofia ai:
Maualuga Maualuga: O le SiC e sili atu lona va'a (3.26 eV) pe a fa'atusatusa i le silicon (1.1 eV), e fa'atagaina ai masini e fa'agaoioi i voluma maualuga, alalaupapa, ma le vevela. O lenei mea e oʻo atu ai i le faʻaitiitia o le paʻu o le eletise ma sili atu le lelei i faiga faʻaliliuina eletise.
Amioga vevela maualuga: SiC's thermal conductivity e sili atu le maualuga nai lo le silicon, e mafai ai ona sili atu le faʻafefe o le vevela i faʻaoga maualuga-malosi, lea e faʻaleleia ai le faʻatuatuaina ma le ola o masini eletise.
Malosi maualuga ma le taimi nei taulima: O masini SiC e mafai ona faʻatautaia le maualuga o le voltage ma le tulaga o loʻo i ai nei, e faʻaogaina ai mo faʻaoga maualuga-malosi pei o taʻavale eletise, faʻafouina malosiaga faʻafouina, ma taʻavale afi.
Saosaoa Suiga Saosaoa: O masini SiC o loʻo i ai le vave faʻafesoʻotaʻi gafatia, lea e saofagā i le faʻaitiitia o le malosi o le gau ma le tele o le tino, ma faʻaogaina lelei mo faʻaoga maualuga.
Q2: O a faʻaoga autu a SiC wafers i totonu o pisinisi taʻavale?
A2:
I totonu o fale taʻavale, SiC wafers e faʻaaogaina muamua i:
Ta'avale eletise (EV) Powertrains: vaega fa'avae SiC peifa'afoligamamalosi MOSFETsfa'aleleia atili le lelei ma le fa'atinoina o ta'avale eletise e ala i le fa'agaoioia o suiga vave ma le maualuga o le malosi. E mafua ai le umi o le ola o le maa ma sili atu le lelei o le faatinoga o taavale.
Totogi i luga ole Laupapa: O masini SiC e fesoasoani e faʻaleleia le faʻaogaina o faiga faʻapipiʻi i luga o le laupapa e ala i le faʻavaveina o taimi faʻapipiʻi ma sili atu le puleaina o le vevela, lea e taua tele mo EVs e lagolago ai le maualuga o le eletise.
Faiga Fa'afoega o Ma'a (BMS): SiC tekinolosi faʻaleleia le lelei ofaiga pulea maa, e mafai ai ona sili atu tulafono faatonutonu voltage, sili atu le puleaina o le eletise, ma umi atu le ola o le maa.
Fa'aliliuga DC-DC: SiC wafers o loʻo faʻaaogaina iDC-DC liliue faaliliu ai le mana DC maualuga-voltage i le maualalo-voltage DC malosi sili atu ona lelei, lea e taua tele i taavale eletise e pulea ai le malosi mai le maa i vaega eseese o le taavale.
O le maualuga o le faatinoga a le SiC i le maualuga-voltage, maualuga-vevela, ma le maualuga o le faʻaogaina o talosaga e taua tele mo le faʻaogaina o pisinisi i le eletise.
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