SiC substrate P-ituaiga 4H/6H-P 3C-N 4inch ma le mafiafia o le 350um Gaosia vasega Dummy vasega

SiC substrate P-ituaiga 4H/6H-P 3C-N 4inch ma le mafiafia o le 350um Gaosia vasega Dummy togi Fa'aalia ata

Fa'amatalaga Puupuu:

O le P-type 4H / 6H-P 3C-N 4-inch SiC substrate, faʻatasi ai ma le mafiafia o le 350 μm, o se mea semiconductor maualuga faʻatinoga faʻaaogaina lautele i le gaosiga o masini eletise. Ua lauiloa i le tulaga ese o le vevela, le maualuga o le gau, ma le tetee atu i le vevela vevela ma siosiomaga pala, o lenei mea e sili ona lelei mo le eletise eletise. O le gaosiga-grade substrate o loʻo faʻaaogaina i le gaosiga tele, faʻamautinoaina le pulea lelei o le lelei ma le maualuga o le faʻatuatuaina i masini faʻaeletoroni. I le taimi nei, o le mea faʻapipiʻi-grade e faʻaaoga muamua mo le faʻaogaina o le faʻaogaina, faʻavasegaina o meafaigaluega, ma le faʻataʻitaʻiga. O meatotino maualuga a le SiC e avea ma filifiliga sili mo masini o loʻo faʻaogaina i le maualuga-vevela, maualuga-voltage, ma le maualuga-televave siosiomaga, e aofia ai masini eletise ma faiga RF.

Auina imeli ia matou

Fa'amatalaga Oloa

Faailoga o oloa

4inch SiC substrate P-ituaiga 4H/6H-P 3C-N laulau ta'oto

4 inisi le lautele SiliconCarbide (SiC) Lafu Fa'amatalaga

Vasega			Zero MPD Gaosiga Vasega (Z Vasega)	Gaosiga Fa'ata'atia Vasega (P Vasega)	Fa'ailoga Tulaga (D Vasega)
Diamita			99.5 mm~100.0 mm
mafiafia			350 μm ± 25 μm
Fa'asinomaga ole Wafer			Tu'u ese: 2.0°-4.0° agai i le [112(-)0] ± 0.5° mo le 4H/6H-P, On axis:〈111〉± 0.5° mo 3C-N
Micropipe Density			0 cm-2
Tete'e	p-ituaiga 4H/6H-P		≤0.1 Ωꞏcm		≤0.3 Ωꞏcm
	n-ituaiga 3C-N		≤0.8 mΩꞏcm		≤1 m Ωꞏcm
Primary Flat Orientation		4H/6H-P	- {1010} ± 5.0°
		3C-N	- {110} ± 5.0°
Primary Flat Umi			32.5 mm ± 2.0 mm
Lua Mafolafola Umi			18.0 mm ± 2.0 mm
Tulaga Lua mafolafola			Silisi fa'asaga i luga: 90° CW. mai Prime flat±5.0°
Tuusaunoaga Tupito			3 mm		6 mm
LTV/TTV/Bow/Warp			≤2.5 μm/≤5 μm/≤15 μm/≤30 μm		≤10 μm/≤15 μm/≤25 μm/≤40 μm
Talatala			Polani Ra≤1 nm
			CMP Ra≤0.2 nm		Ra≤0.5 nm
Ta'eta'e Tu'u I le Malamalama Maualuluga			Leai		Fa'aputu umi ≤ 10 mm, tasi umi≤2 mm
Papatusi Hex I Malamalama Maualuga Maualuga			Vaega fa'aopoopo ≤0.05%		Vaega fa'aopoopo ≤0.1%
Polytype Areas I le Malamalama Maualuga			Leai		Vaega fa'aopoopo≤3%
Vaaiga Carbon Inclusions			Vaega fa'aopoopo ≤0.05%		Vaega fa'aopoopo ≤3%
Su'ega Sili Sili I luga o le Malamalama Maualuga			Leai		Fa'aopoopo umi≤1×wafer diameter
Sisi Chips Maualuluga I Malosiaga Malamalama			Leai se faatagaina ≥0.2mm lautele ma loloto		5 faatagaina, ≤1 mm taitasi
Silicon Surface Contamination I le Malosi Maualuga			Leai
afifiina			Tele-wafer kaseti po'o se atigipusa ta'itoatasi

Fa'amatalaga:

※ Fa'atapula'a fa'aletonu e fa'atatau i luga atoa o le ga'o, se'i vagana ai le pito e fa'ate'aina. # E tatau ona siaki na'o mata o Si foliga.

O le P-ituaiga 4H / 6H-P 3C-N 4-inisi SiC substrate ma le mafiafia o le 350 μm o loʻo faʻaaogaina lautele i le gaosiga o masini eletise ma eletise. Fa'atasi ai ma le lelei tele o le fa'aogaina o le vevela, maualuga le malepelepe voltage, ma le malosi o le tete'e atu i si'osi'omaga ogaoga, o lenei mea e sili ona lelei mo mea fa'aeletonika eletise maualuga e pei o le maualuga-voltage switches, inverters, ma masini RF. O lo'o fa'aaogaina fa'ameamea fa'akomepiuta i le gaosiga tele, fa'amautinoaina le fa'atuatuaina, maualuga le fa'atinoina o masini, lea e taua tele mo le fa'aogaina o le eletise ma le tele o taimi. Dummy-grade substrates, i le isi itu, e masani ona faʻaaogaina mo le faʻavasegaina o faʻagasologa, suʻega meafaigaluega, ma le faʻataʻitaʻiga faʻataʻitaʻiga, fesoasoani e faʻamautu le lelei ma le faʻagasologa o le faʻagasologa i le gaosiga o le semiconductor.

Fa'amatalagaO mea lelei ole N-type SiC composite substrates e aofia ai

Amioga vevela maualuga: O le fa'amama lelei o le vevela e fa'amalieina ai le substrate mo le maualuga o le vevela ma le maualuga o le mana.
Malosi maualuga malepe: Lagolagoina galuega maualuga-voltage, faʻamautinoa le faʻamaoni i le eletise eletise ma masini RF.
Tete'e i Siosiomaga Saua: Tumau i tulaga ogaoga e pei o le maualuga o le vevela ma siosiomaga pala, faʻamautinoa le umi o le faʻatinoga.
Gaosiga-Vaega Sa'o: Faʻamautinoa le maualuga ma le faʻatuatuaina o faʻatinoga i le gaosiga tele, talafeagai mo le faʻaogaina o le malosi ma le RF.
Tu'u-Fa'ailoga mo Su'ega: Fa'atagaina le fa'avasegaina sa'o o le fa'agasologa, su'ega meafaigaluega, ma fa'ata'ita'iga e aunoa ma le fa'afefeteina o fa'ato'aga fa'atosina.

I le aotelega, o le P-ituaiga 4H / 6H-P 3C-N 4-inisi SiC substrate ma le mafiafia o le 350 μm e ofoina atu tulaga lelei tele mo faʻaoga eletise maualuga. O lona maualuga maualuga o le vevela ma le malepelepe eletise e faʻamaonia ai le maualuga o le malosi ma le maualuga o le vevela, ae o lona tetee atu i tulaga faigata e mautinoa ai le tumau ma le faʻamaoni. O le mea e gaosia-grade substrate fa'amautinoa le sa'o ma le fa'aauau le fa'atinoga i le gaosiga tele o le eletise eletise ma masini RF. I le taimi nei, e manaʻomia le suʻega faʻataʻitaʻi mo le faʻavasegaina o faʻagasologa, suʻega meafaigaluega, ma faʻataʻitaʻiga, lagolagoina le pulea lelei ma le tumau i le gaosiga o le semiconductor. O nei foliga e fa'aogaina ai le SiC substrates e sili ona lelei mo fa'aoga maualuluga.