Substrate
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SiC substrate 3inisi 350um le mafiafia HPSI ituaiga Prime Grade Dummy grade
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E mafai ona fa'apitoa le mafiafia o le Silicon Carbide SiC Ingot 6 inisi N ituaiga Dummy/prime grade
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6 inisi Silicon Carbide 4H-SiC Semi-Insulating Ingot, Dummy Grade
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SiC Ingot ituaiga 4H Dia 4 inisi 6 inisi Mafiafia 5-10mm Vasega Suesuega / Dummy
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6 inisi safaira Boule safaira e leai se lanu tioata e tasi Al2O3 99.999%
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Sic Substrate Silicon Carbide Wafer 4H-N Ituaiga Maualuga le Ma'a'a ma le Tete'e i le Pala Prime Grade Polishing
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2inisi Silicon Carbide Wafer 6H-N Ituaiga Prime Grade Research Grade Dummy Grade 330μm 430μm Mafiafia
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2inisi le silicon carbide substrate 6H-N itu lua ua fa'apupula lautele 50.8mm le vasega gaosiga o su'esu'ega
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P-ituaiga 4H/6H-P 3C-N ITIITI SIC substrate 4 inisi 〈111〉± 0.5°Zero MPD
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SiC substrate ituaiga-P 4H/6H-P 3C-N 4 inisi ma le mafiafia e 350um Vasega gaosiga Vasega Dummy
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4H/6H-P 6 inisi SiC wafer Zero MPD vasega Vasega Gaosiga Vasega Dummy
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P-type SiC wafer 4H/6H-P 3C-N 6 inisi le mafiafia 350 μm ma le Fa'asinomaga Laulau Muamua