3 inisi Mamalu Maualuga (Leai) Silicon Carbide Wafers Semi-Insulating Sic Substrates (HPSl)
Meatotino
1. Meatotino Faaletino ma Fauga
●Ituaiga Mea: Mamalu Maualuga (Undoped) Silicon Carbide (SiC)
●Tomia: 3 inisi (76.2 mm)
●Mafia: 0.33-0.5 mm, faʻapitoa e faʻavae i luga o manaʻoga talosaga.
●Crystal Structure: 4H-SiC polytype faʻatasi ai ma se lattice hexagonal, e lauiloa mo le maualuga o le eletise eletise ma le mautu o le vevela.
●Fa'atonuga:
oStandard: [0001] (C-vaalele), talafeagai mo le tele o faʻaoga.
Filifili: Off-axis (4° po'o le 8° fa'asaga) mo le fa'atuputeleina o le epitaxial o fa'alava masini.
●Flatness: Aofa'i mafiafia fesuiaiga (TTV) ●Surface Quality:
o Fa'alia i le ma'iti'i maualalo-fa'aletonu (<10/cm² micropipe density). 2. Eletise Meatotino ●Resistivity: >109^99 Ω·cm, tausia e ala i le aveesea o dopants faamoemoe.
●Dielectric Malosi: Maualuluga maualuga le tumau ma itiiti dielectric gau, lelei mo talosaga maualuga-mana.
●Thermal Conductivity: 3.5-4.9 W / cm·K, faʻamalosia lelei le faʻafefe o le vevela i masini maualuga.
3. Meatotino vevela ma masini
●Wide Bandgap: 3.26 eV, fa'agaioiga lagolago i lalo ole voltage maualuga, maualuga le vevela, ma tulaga maualuga fa'avevela.
●Maaa: Mohs fua 9, faʻamautinoa le malosi mai le faʻaogaina o masini i le taimi o gaioiga.
●Fa'alili Fa'ainitaneti: 4.2×10−6/K4.2 \times 10^{-6}/\text{K}4.2×10−6/K, fa'amautinoa le mautu o le fua i lalo o fesuiaiga o le vevela.
| Parameter | Gaosia Vasega | Vasega Suesuega | Fa'ailoga Fa'ata | Vaega |
| Vasega | Gaosia Vasega | Vasega Suesuega | Fa'ailoga Fa'ata | |
| Diamita | 76.2 ± 0.5 | 76.2 ± 0.5 | 76.2 ± 0.5 | mm |
| mafiafia | 500 ± 25 | 500 ± 25 | 500 ± 25 | µm |
| Fa'asinomaga ole Wafer | I luga ole tulaga: <0001> ± 0.5° | I luga ole tulaga: <0001> ± 2.0° | I luga ole tulaga: <0001> ± 2.0° | tikeri |
| Malosi'i paipa (MPD) | ≤ 1 | ≤ 5 | ≤ 10 | cm−2^-2−2 |
| Tete'e eletise | ≥ 1E10 | ≥ 1E5 | ≥ 1E5 | Ω·cm |
| Fa'amamafa | Fa'asalaina | Fa'asalaina | Fa'asalaina | |
| Primary Flat Orientation | {1-100} ± 5.0° | {1-100} ± 5.0° | {1-100} ± 5.0° | tikeri |
| Primary Flat Umi | 32.5 ± 3.0 | 32.5 ± 3.0 | 32.5 ± 3.0 | mm |
| Lua Mafolafola Umi | 18.0 ± 2.0 | 18.0 ± 2.0 | 18.0 ± 2.0 | mm |
| Tulaga Lua mafolafola | 90° CW mai mafolafola muamua ± 5.0° | 90° CW mai mafolafola muamua ± 5.0° | 90° CW mai mafolafola muamua ± 5.0° | tikeri |
| Tuusaunoaga Tupito | 3 | 3 | 3 | mm |
| LTV/TTV/Bow/Warp | 3 / 10 / ±30 / 40 | 3 / 10 / ±30 / 40 | 5 / 15 / ±40 / 45 | µm |
| Fa'asaa o luga | Si-foliga: CMP, C-foliga: Faila | Si-foliga: CMP, C-foliga: Faila | Si-foliga: CMP, C-foliga: Faila | |
| Ta'eta'e (Malu Mamalu) | Leai | Leai | Leai | |
| Papatusi Hex (Malamalama Maualuluga) | Leai | Leai | Vaega fa'aopoopo 10% | % |
| Avanoa Polytype (Malamalama Malosi Tele) | Vaega fa'aopoopo 5% | Vaega fa'aopoopo 20% | Vaega fa'aopoopo 30% | % |
| Mata'i (Malu Malosi) | ≤ 5 maosiosi, fa'aputu umi ≤ 150 | ≤ 10 maosiosi, fa'aputu umi ≤ 200 | ≤ 10 maosiosi, fa'aputu umi ≤ 200 | mm |
| Tu'u pito | Leai ≥ 0.5 mm lautele/loloto | 2 faatagaina ≤ 1 mm lautele/loloto | 5 fa'atagaina ≤ 5 mm lautele/loloto | mm |
| Fa'aleagaina i luga | Leai | Leai | Leai |
Talosaga
1. Malosiaga Fa'aeletonika
O le vaeluaga lautele ma le maualuga o le vevela o le HPSI SiC substrates e lelei ai mo masini eletise o loʻo faʻaogaina i tulaga ogaoga, e pei o:
●Measini Maualuluga: E aofia ai MOSFETs, IGBTs, ma Schottky Barrier Diodes (SBDs) mo le suiga lelei o le mana.
●Faiga Fa'afouina Malosi'aga: E pei o fa'aliliuga o le la ma le fa'atonutonuina o le uila afi.
●Ta'avale Fa'aeletise (EVs): Fa'aaogā i fa'aliliuga, fa'a'ave'ave, ma fa'aola eletise e fa'aleleia atili ai le lelei ma fa'aitiitia le lapo'a.
2. Talosaga RF ma Microwave
O le maualuga o le tetee ma le maualalo o le dielectric gau o HPSI wafers e taua mo le leitio-alave (RF) ma masini microwave, e aofia ai:
●Feso'ota'iga Atina'e: Nofoaga autu mo feso'ota'iga 5G ma feso'ota'iga satelite.
●Aerospace ma le Puipuiga: Radar system, fa'asologa fa'asolosolo antennas, ma vaega o le avionics.
3. Optoelectronics
O le manino ma le lautele bandgap o le 4H-SiC e mafai ai ona faʻaogaina i masini optoelectronic, pei o:
●UV Photodetectors: Mo le mataʻituina o le siosiomaga ma suʻesuʻega faafomaʻi.
●Uila maualuga-Mamana: Lagolago faiga moli malo malo.
●Laser Diodes: Mo alamanuia ma fomaʻi talosaga.
4. Suesuega ma Atina'e
HPSI SiC substrates o loʻo faʻaaogaina lautele i suʻesuʻega faʻale-aʻoaʻoga ma fale gaosi oloa R&D mo le suʻesuʻeina o meafaitino maualuluga ma le gaosiga o masini, e aofia ai:
●Epitaxial Layer Growth: Su'esu'ega ile fa'aitiitiga o fa'aletonu ma fa'ata'ita'iga lelei.
●Su'esu'ega Fefa'ataua'iga: Su'esu'ega o felauaiga fa'aeletonika ma pu i mea mama maualuga.
● Fa'ata'ita'iga: Fa'avae muamua o masini fou ma ta'amilosaga.
Tulaga lelei
Tulaga Sili:
O le mama maualuga ma le maualalo o le faaletonu e maua ai se tulaga faʻalagolago mo talosaga faʻapitoa.
Fa'amaumau vevela:
O mea lelei e fa'amalo ai le vevela e mafai ai e masini ona fa'agaoioia lelei i lalo o le malosi maualuga ma tulaga vevela.
Feso'ota'i Lautele:
Fa'asinomaga avanoa ma filifiliga mafiafia masani e mautinoa le fetuutuunai mo manaoga eseese masini.
Tumau:
Ma'a'a uiga ese ma le mautu o le fausaga e fa'aitiitia ai le ofuina ma le fa'aletonu i le taimi o le gaosiga ma le fa'agaioiga.
Faigata:
E fetaui mo le tele o pisinisi, mai le malosi faʻafouina i le vateatea ma fesoʻotaʻiga.
Fa'ai'uga
O le 3-inisi High Purity Semi-Insulating Silicon Carbide wafer o lo'o fa'atusalia ai le pito i luga o tekonolosi fa'aoga mo masini maualuga, maualuga, ma masini optoelectronic. O lona tu'ufa'atasiga lelei o le vevela, eletise, ma mea fa'ainisinia e mautinoa ai le fa'atuatuaina o le fa'atinoga i si'osi'omaga lu'itau. Mai le eletise eletise ma le RF faiga i optoelectronics ma R&D alualu i luma, o nei HPSI substrates e maua ai le faavae mo mea fou a taeao.
Mo nisi fa'amatalaga pe tu'u se oka, fa'amolemole fa'afeso'ota'i mai matou. O lo'o avanoa la matou 'au fa'apitoa e tu'uina atu ta'iala ma filifiliga fa'apitoa e fa'atatau i ou mana'oga.
Auiliili Ata
