3 inisi 76.2mm 4H-Semi SiC substrate wafer Silicon Carbide Semi-insulting SiC wafers

Fa'amatalaga Pupuu:

O le wafer SiC tioata e tasi (Silicon Carbide) e maualuga le tulaga lelei mo le alamanuia eletise ma optoelectronics. O le wafer SiC 3inisi o se mea semiconductor o le isi tupulaga, o wafer silicon-carbide e 3-inisi le lautele. O wafers ua fa'amoemoe mo le gaosia o masini eletise, RF ma optoelectronics.


Fa'aaliga

Fa'amatalaga o le Oloa

O le 3-inisi 4H semi-insulated SiC (silicon carbide) substrate wafers o se mea e masani ona faʻaaogaina i le semiconductor. O le 4H e faʻaalia ai se fausaga tioata tetrahexahedral. O le semi-insulation o lona uiga o le substrate e maualuga ona uiga teteʻe ma e mafai ona vavaeʻese teisi mai le tafe o le eletise.

O ia ituaiga o wafers substrate e iai uiga nei: maualuga le conductivity o le vevela, maualalo le conduction loss, tete'e lelei i le vevela maualuga, ma le mautu lelei i masini ma vaila'au. Talu ai ona o le silicon carbide e tele le va o le malosi ma e mafai ona tatalia le vevela maualuga ma tulaga maualuga o le eletise, o wafers semi-insulated 4H-SiC e fa'aaogaina lautele i masini eletise eletise ma masini leitio (RF).

O faʻaoga autū o wafers semi-insulated 4H-SiC e aofia ai:

1--Mea fa'aeletoronika eletise: E mafai ona fa'aaogaina wafers 4H-SiC e gaosia ai masini fesuia'i eletise e pei o MOSFET (Metal Oxide Semiconductor Field Effect Transistors), IGBT (Insulated Gate Bipolar Transistors) ma Schottky diodes. O nei masini e maualalo le fa'agasologa o le eletise ma le fesuia'iga i siosiomaga maualuga le voltage ma le vevela maualuga ma e ofoina atu le lelei ma le fa'atuatuaina maualuga.

2--Meafaigaluega Fa'asalalau Leitio (RF): E mafai ona fa'aaogaina wafers semi-insulated 4H-SiC e fai ai amplifiers eletise RF maualuga le malosi, resistors chip, filters, ma isi masini. E sili atu le lelei o le fa'atinoga maualuga o le leo ma le mautu o le vevela o le Silicon carbide ona o lona fua faatatau o le electron saturation drift maualuga ma le maualuga o le thermal conductivity.

3--Masini optoelektronika: E mafai ona fa'aaogaina wafers semi-insulated 4H-SiC e gaosia ai diodes laser malosi, masini e iloa ai malamalama UV ma matagaluega tu'ufa'atasi optoelektronika.

I le tulaga o le fa'asinomaga o le maketi, o lo'o fa'atupula'ia le mana'oga mo wafers semi-insulated 4H-SiC fa'atasi ai ma le fa'atupula'ia o vaega o le eletise eletise, RF ma optoelectronics. E mafua lenei mea ona o le silicon carbide e tele ona fa'aoga, e aofia ai le fa'aogaina lelei o le malosi, ta'avale eletise, malosiaga fa'afouina ma feso'ota'iga. I le lumana'i, o lo'o tumau pea le manuia o le maketi mo wafers semi-insulated 4H-SiC ma e fa'amoemoeina o le a suia ai mea masani o le silicon i le tele o fa'aoga.

Ata Auiliili

O le SiC wafers e fa'aleagaina fa'afa'afa (1)
O le SiC wafers e fa'aleagaina fa'afa'afa (2)
O le SiC wafers e fa'aleagaina fa'afa'afa (3)

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